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首页> 外文期刊>Journal of Semiconductors >X-parameter measurement on a GaN HEMT device: complexity reduction study of load-pull characterization test setup
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X-parameter measurement on a GaN HEMT device: complexity reduction study of load-pull characterization test setup

机译：GaN HEMT器件上的X参数测量：降低负载-负载表征测试装置的复杂度研究

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摘要

Characterization of power transistors is an indispensable step in the design of radio frequency and microwave power amplifiers. A full harmonic load-pull measurement setup is normally required for the accurate and comprehensive characterization of RF power transistors. The setup is usually highly complex, leading to a relatively high hardware cost and low measurement throughput. This paper presents X-parameter measurement on a gallium nitride (GaN) high-electron-mobility transistor and studies the potential of utilizing an X-parameter-based modeling technique to highly reduce the complexity of the harmonic load-pull measurement setup for transistor characterization. During the X-parameter measurement and characterization, load impedance of the device is tuned and controlled only at the fundamental frequency and is left uncontrolled at other higher harmonics. However, it proves preliminarily that the extracted X-parameters can still predict the behavior of the device with moderate to high accuracy, when the load impedance is tuned up to the third-order harmonic frequency. It means that a fundamental-only load-pull test setup is already enough even though the device is to be characterized under load tuning up to the third-order harmonic frequency, by utilizing X-parameters.
机译：功率晶体管的表征是射频和微波功率放大器设计中必不可少的步骤。为了准确，全面地表征RF功率晶体管，通常需要完整的谐波负载-牵引测量设置。设置通常非常复杂，导致相对较高的硬件成本和较低的测量吞吐量。本文介绍了氮化镓（GaN）高电子迁移率晶体管的X参数测量，并研究了利用基于X参数的建模技术来极大降低用于晶体管表征的谐波负载-拉力测量装置的复杂性的潜力。在X参数的测量和表征过程中，仅在基频下调谐和控制设备的负载阻抗，而在其他高次谐波下则不受控制。但是，初步证明，当负载阻抗调至三阶谐波频率时，提取的X参数仍可以以中等到高精度预测设备的性能。这意味着，即使使用X参数对器件进行负载调谐，直至达到三阶谐波频率，也仅进行基本负载负载测试设置就足够了。

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