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Characterization of the Solid State Properties of Anodic Oxides on Ta-Nb Alloys as a Function of the Anodizing Conditions

机译:作为阳极氧化条件的阳极氧化物阳极氧化物固态性质的表征

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Tantalum oxide, niobium oxide and Ta-Nb containing mixed oxides were grown by anodizing sputter-deposited Ta_xNb_((1-x)) alloys with 0 ≤ x ≤ 1. A photoelectrochemical investigation was performed in order to estimate the band gap values of the oxides as a function of their composition as well as to estimate their flat band potential. Differential capacitance, C, curves were recorded for all the investigated oxides in a wide range of electrode potential and for several frequencies of the alternative signal. The dependence of C on the applied potential and a.c. frequency was interpreted on the basis of amorphous semiconductor Schottky barrier, and allowed to estimate the dielectric constant of the investigated oxides.
机译:通过阳极氧化溅射沉积的Ta_xNb _((1-x))合金而生长氧化钽,氧化铌和含有混合氧化物的Ta-Nb,具有0≤x≤1的合金。进行光电化学研究,以估计带隙值的带隙值氧化物作为它们的组合物的函数以及估计其平带电位。差分电容,C,曲线被记录在宽范围的电极电位和若干频率的替代信号中的所有调查氧化物。 C对施加潜力和A.C的依赖性。频率在非晶半导体肖特基屏障的基础上解释,并允许估计所研究的氧化物的介电常数。

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