Characterization of AlGaN/GaN Cantilevers Fabricated with Deep-Release Techniques

机译：用深释放技术制造的AlGaN / GaN悬臂的特征

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In this article, integrated AlGaN/GaN cantilevers on (111) silicon substrate are fabricated and characterized. The process started with AlGaN/GaN HEMTs fabrication followed by a series of dry-etch-only MEMS process. To characterize the residual stress distribution, Micro-Raman spectroscopy is used and the residual stress in suspended GaN cantilever is found ～90% lower after releasing. A type of micro-bending test is used to characterize the piezoresponse of AlGaN/GaN HEMT on the GaN cantilever. An output current modulation greater than 20% can be observed when the cantilever is vertically downward deflected ～30 μm.

机译：在本文中，（111）硅衬底上的集成AlGaN / GaN悬臂用于制造和表征。该过程开始于AlGaN / GaN Hemts制造，然后是一系列干蚀刻的MEMS过程。为了表征残留应力分布，使用微拉曼光谱，释放后悬浮的GaN悬臂的残余应力在释放后〜90％降低。一种类型的微弯曲试验用于表征AlGaN / GaN Hemt的压电响应在GaN悬臂上。当悬臂垂直向下偏转〜30μm时，可以观察到大于20％的输出电流调制。

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《Annual Conference of the Chinese Society of Micro-Nano Technology》|2011年||共4页
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作者
Jianan Lv; Zhenchuan Yang; Guizhen Yan;
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原文格式 PDF
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中图分类 TB3-532;
关键词
Gallium nitride; cantilevers; MEMS; bending test;

机译：氮化镓;悬臂;MEMS;弯曲试验;

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4. Characterization of AlGaN/GaN Cantilevers Fabricated with Deep-Release Techniques [C] . Jianan Lv, Zhenchuan Yang, Guizhen Yan Annual Conference of the Chinese Society of Micro-Nano Technology . 2011

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Characterization of AlGaN/GaN Cantilevers Fabricated with Deep-Release Techniques

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