• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Conference on epitaxial growth processes >Scanning tunneling microscopy and angle of mounds study of gallium arsenide grown by molecular beam epitaxy
【24h】

Scanning tunneling microscopy and angle of mounds study of gallium arsenide grown by molecular beam epitaxy

机译：扫描分子束外延生长砷化镓砷化镓研究的隧道显微镜和角度研究

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The molecular beam epitaxy growth of GaAs homoepitaxial films has been studied. Scanning tunneling microscopy images show that in the earliest stages of growth the surface morphology oscillates between one with two-dimensional islands and flat terraces. Concomitant with the decay of the RHEED oscillations, the surface morphology evolves to a dynamical steady state characterized by a constant value of the step density. Numerical models of the growth allow a prediction to be made for the asymtotic value of the step density. On a larger length scale (approximately 10 $mu@m) the surface morphology is found to consist of large mounds. The angle of the mounds with respect to the substrate is fixed and is determined by the separation between nucleating islands. This growth instability is found for singular surfaces and is absent for vicinal surfaces grown under step flow conditions.
机译：已经研究了GaAs胎儿膜的分子束外延生长。扫描隧穿显微镜图像显示，在最早的生长阶段，表面形态与二维岛屿和平台之间的表面形态振荡。伴随着RHEED振荡的衰减，表面形态表现为具有步进密度恒定值的动态稳态。生长的数值模型允许对步步密度的渐近值进行预测。在更大的长度（大约10 $ MU @ M）上，发现表面形态由大型土堆组成。土墩相对于基板的角度是固定的并且通过成核岛之间的分离来确定。这种生长不稳定是针对奇异表面的，并且不存在于在阶梯流动条件下生长的静脉表面。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号