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首页> 外文会议>Conference on image intensifiers and applications, and characteristics and consequences of space debris and near-earth objects >Gallium-arsenide electron-bombarded CCD technology
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Gallium-arsenide electron-bombarded CCD technology

机译：镓 - 砷电子轰炸CCD技术

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Electron Bombarded Charge Coupled Devices (EBCCD) which utilize a high performance Gallium Arsenide (GaAs) photocathode have been fabricated and characterized for performance and tube operating life. The EBCCD utilized an 11 mm diagonal, backside illuminated, frame transfer CCD compatible with RS170 video output. The CCD incorporated lateral anti-blooming structures optimized for backside operation. The EBCCD tube was proximity focused and operated with high gain (greater than 150) at low electron landing voltages (less than 2 kV). The EBCCD was integrated in a gated camera system with fast rise and fall times (less than 50 ns). Predicted operating life in a gated camera system as determined by accelerated tests is in excess of 12,000 hours, limited by photocathode degradation.
机译：采用高性能砷化镓（GaAs）光电阴极的电子轰炸电荷耦合器件（EBCCD）已经制造，并表征了性能和管操作寿命。 EBCCD利用11毫米对角线，背面照明，帧传输CCD与RS170视频输出兼容。 CCD加入了针对背面操作的横向防盛结构。在低电子降落电压下（小于2kV），EBCCD管接近聚焦并在高增益（大于150）中操作。 EBCCD集成在一个快速上升和下降时间（小于50ns）的门控相机系统中。通过加速测试确定的门控相机系统中预测的经营寿命超过12,000小时，受光电阴极劣化的限制。

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