ORGANOMETALLIC VAPOR PHASE LATERAL EPITAXY OF LOW DEFECT DENSITY GaN LAYERS

机译：低缺损密度GaN层的有机金属气相横向外延

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Lateral epitaxial overgrowth (LEO) of GaN layers has been achieved on 3 μm wide and 7 μm spaced stripe windows contained in SiO_2 masks on GaN/AlN/6H-SiC(0001) substrates via organometallic vapor phase epitaxy (OMVPE). The extent and microstructural characteristics of lateral overgrowth were a complex function of stripe orientation, growth temperature and triethylgallium (TEG) flow rate. A high density of threading dislocations, originating from the interface of the underlying GaN with the A1N buffer layer, were contained in the GaN grown in the window regions. The overgrowth regions, by contrast, contained a very low density of dislocations. The second lateral epitaxial overgrowth layers were obtained on the first laterally grown layers by the repetition of SiO_2 deposition, lithography and lateral epitaxy.

机译：通过有机金属气相外延（OMVPE），在GaN / Aln / 6H-SiC（0001）衬底上的3μm宽和7μm间隔条纹窗口上实现了GaN层的横向外延过度生长（Leo）。横向过度生长的程度和微观结构特征是条纹取向，生长温度和三乙基镓（TEG）流速的复杂功能。在窗口区域生长的GaN中包含高密度的螺纹脱位，源自具有A1N缓冲层的下面的GaN的界面。相比之下，过度生长区域含有非常低的位错密度。通过重复SiO_2沉积，光刻和横向外延，在第一横向生长的层上获得第二横向外延过度生长层。

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《Symposium on nitride semiconductors》|1998年||共6页
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4. ORGANOMETALLIC VAPOR PHASE LATERAL EPITAXY OF LOW DEFECT DENSITY GaN LAYERS [C] . Symposium on nitride semiconductors . 1998

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机译：单和双SiNx中间层对通过有机金属气相外延生长的GaN覆盖层中的缺陷减少的功效

ORGANOMETALLIC VAPOR PHASE LATERAL EPITAXY OF LOW DEFECT DENSITY GaN LAYERS

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