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Synthesis of boron carbide nanowires and nanocrystal arrays by plasma enhanced chemical vapor deposition

机译:等离子体增强化学气相沉积合成碳化硼含硼纳米线和纳米晶体阵列

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A plasma enhanced chemical vapor deposition technique has been developed to grow single crystal boron carbide nanowires and nanonecklace arrays using the single precursor closo-1,2-dicarbadodecaborane (C_2B_(10)h_(12)). Nanowire and nanonecklace growth is expedited by Fe seeding of the substrate. Using the compound Fe-(C_5H_2)_2 as an Fe source, it has been demonstrated that the density of nanowires, as well as the types of nanostructures that grow, can be tailored by controlling the concentration of Fe deposited onto the substrate surface prior to boron carbide deposition.
机译:已经开发了一种等离子体增强的化学气相沉积技术,用于使用单一前体梭菌 - 1,2-二碳二癸烷(C_2B_(10)H_(12))生长单晶硼碳化物纳米线和纳诺克板阵列。纳米线和纳米克拉斯生长是通过衬底的Fe播种加快的。使用化合物Fe-(C_5H_2)_2作为Fe源,已经证明纳米线的密度,以及通过控制在基底表面上的Fe浓度来定制的纳米线的密度以及生长的纳米结构的类型碳化硼沉积。

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