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Raman spectroscopy of self-assembled InAs quantum dots in wide-bandgap matrices of AlAs and aluminium oxide

机译:铝和氧化铝的宽带隙矩阵中自组装INAS量子点的拉曼光谱

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Vibrational properties of self-assembled InAs quantum dots (QD's) embdded in AlAs and aluminium oxide were studied by Raman spectroscopy.The InAs/AlAs QD structures were grown by molecular beam epitaxy on GaAs (001) substrates.The following main features of the phonon spectra of InAs/AlAs QD nanostructures were observed:1) asymmetric lines of QD LO phonons affected by strain,confinement and size inhomogeneity of QD;s'2) confined phonons of InAs wetting layer (WL);3 two bands of interface phonons in the AlAs frequency region,attributed to modes associated with the planar interface WL/AlAs matrix and the three-dimensional QD/matrix interface;4) doubles of folded acoustic phonons caused by periodicity in the multilayer QD structures.
机译:通过拉曼光谱研究了αS和氧化铝中的自组装INAS量子点(QD)的振动性能。通过在GaAs(001)基材上的分子束外延生长InAs / Alas QD结构。以下主机的主要特征观察INAS / ALAS QD纳米结构的光谱:1)受QD的应变,限制和尺寸影响的QD LO声子的不对称线; S'2)INAS润湿层(WL)的限制声子; 3两个界面声子ALAS频率区域归因于与平面接口WL / ALAS矩阵相关的模式和三维QD /矩阵界面; 4)由多层QD结构中的周期性引起的折叠声子位的倍增。

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