Low Thermal Budget NiSi Films on SiGe Alloys

机译：低温预算NISI薄膜在SIGE合金上

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Nickel silicides were formed on Si (100) substrates and CVD grown Si_(0.9)Ge_(0.1)/Si layers by low thermal budget annealing of evaporated Ni films to evaluate their utility for ultra shallow junctions.The phase formation and microstructure of silicides formed using conventional furnace and rapid thermal annealing were studied by x-ray diffraction,Rutherford backscattering (RBS),x-ray photoelectron spectroscopy (XPS) and atomic force microscopy.RBS simulations and XPS study revealed the formation of a ternary nickel germanosilicide phase for the SiGe alloy.The incorporation of Ge resulted in a higher temperature window for the stability of low- resistive monosilicide phase.Electrical properties of the grown silicides were characterized by four-probe resistivity and contact resistance measurements.

机译：通过蒸发的Ni膜的低热预算退火在Si（100）底物和CVD生长Si_（0.9）Ge_（0.1）/ Si层上形成镍硅化物，以评估其用于超浅线的效用。形成的硅化物的相形成和微观结构通过X射线衍射研究X射线衍射（RB），X射线光电子能谱（XPS）和原子力显微镜，研究了使用常规炉和快速热退火。用于XPS模拟和XPS研究显示，形成三元镍锗硅化物相的形成SiGe合金导致Ge的掺入导致更高的温度窗口，用于低电阻单硅烷相的稳定性。通过四探测电阻率和接触电阻测量，表征生长硅化物的电性能。

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《Materials Research Society Symposium》|2003年||共6页
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S.K.Ray; T.N.Adam; G.S.Kar; C.P.Swann; J.Kolodzey;
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中图分类工程材料学;
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1. Thermal stability and electrical characteristics of NiSi films with electroplated Ni(W) alloy [J] . Yuhang Xin, Anmin Hu, Ming Li, Applied Surface Science . 2011,第22期

机译：电镀Ni（W）合金的NiSi膜的热稳定性和电特性
2. Thermal stability study of NiSi and NiSi_2 thin films [J] . F.F. Zhao, J.Z. Zheng, Z.X. Shen, Microelectronic Engineering . 2004,第1期

机译：NiSi和NiSi_2薄膜的热稳定性研究
3. NiSi-Tb alloy interlayer properties at NiSi/Si junctions for improving thermal stability and contact resistance [J] . Eadi Sunil Babu, Song Ki-Woo, Song Hyeong-Sub, Microelectronic Engineering . 2021,第Feba期

机译：NISI-TB合金中间层间性能在NISI / SI接口，用于提高热稳定性和接触电阻
4. Low Thermal Budget NiSi Films on SiGe Alloys [C] . S.K.Ray, T.N.Adam, G.S.Kar, Materials Research Society Symposium . 2003

机译：低温预算NISI薄膜在SIGE合金上
5. A low thermal budget polycrystalline silicon-germanium/silicon thin film transistor technology [D] . Wang, Albert William 1998

机译：低热预算多晶硅-锗/硅薄膜晶体管技术
6. Low‐Thermal‐Budget Doping: Low‐Thermal‐Budget Doping of 2D Materials in Ambient Air Exemplified by Synthesis of Boron‐Doped Reduced Graphene Oxide (Adv. Sci. 7/2020) [O] . Jun‐Hwe Cha, Dong‐Ha Kim, Cheolmin Park, 2020

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7. Thermal deterioration of Pb-In alloy films under thermal stress cycles from 343K to 78K. (Hillock formation of Pb-In alloy films for Josephson-Junction device) [O] . Hideharu OHARA, Yoshimi KURODA, Toshimitsu YOKOBORI 1986

机译：在343k至78K的热应力循环下PB在合金膜的热劣化。（Josephson-Junction装置的PB合金薄膜的Hillock形成）
8. Investigation of the kinetics of surface-limited thin film growth of SiGe alloys [R] . Sharp, J W, Eres, G 1992

机译：siGe合金表面限制薄膜生长动力学研究

Low Thermal Budget NiSi Films on SiGe Alloys

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