首页> 外文会议>Materials Research Society Symposium >Screening the High-k Layer Quality by Means of Open Circuit Potential Analysis and Wet Chemical Etching
【24h】

Screening the High-k Layer Quality by Means of Open Circuit Potential Analysis and Wet Chemical Etching

机译:通过开路电位分析和湿化学蚀刻筛选高k层质量

获取原文

摘要

A fast way to monitor the quality of high-k dielectric layers is wet etching,either monitored by Open Circuit Potential analysis or by Scanning Electron Microscopy.Defect densities in the order of 1.109 defects/cm2 are observed for as-deposited HfO2 layers.It is assumed that the mechanism for wet chemical defect observation is either due to crystallization and/or due to an oxygen deficient HfO21ayer resulting in Si/SiO up-diffusion upon thennal treatment.However,after appropriate post deposition annealing wet etch defect free layers can be prepared.
机译:监测高k介电层的质量的快速方式是湿法蚀刻,由开路电位分析监测或通过扫描电子显微镜。为沉积的HFO2层观察到1.109缺陷/ cm2的尺寸。被认为是湿化学缺陷观察的机制是由于结晶和/或由于缺氧HFO21AYER,在当时产生Si / SiO up-扩散。然而,在适当的后沉积退火后,湿蚀刻缺陷自由层可以是准备好了。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号