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The Effect of Changing Epitaxial Strain on Colossal Magnetoresistance Thin Films

机译：改变外延应变对巨磁电阻薄膜的影响

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We have studied the properties of epitaxial La_(1-x)Sr_xMnO_3 (x = 0.3, 0.5) epitaxial thin films grown on BaTiO_3 and SrTiO_3. Significant modifications of properties are observed in magnetization and resistivity versus temperature experiments. These modifications occur at temperatures corresponding to structural phase transitions in the substrate. The x = 0.5 composition is particularly sensitive to changes in the epitaxial strain state, exhibiting a direct correlation between changes in strain, magnetization and resistivity. Strain can also be induced in BaTiO_3 by the inverse piezoelectric effect, which results in as much as a 13% decrease in the resistivity of the film.
机译：我们研究了在BATIO_3和SRTIO_3上生长的外延LA_（1-X）SR_XMNO_3（x = 0.3,0.5）外延薄膜的性质。在磁化和电阻率与温度实验中，观察到具有显着改性性能。这些修改发生在对应于基板中的结构相转变的温度下。 X = 0.5组合物对外延应变状态的变化特别敏感，表现出应变，磁化和电阻率变化之间的直接相关性。应变也可以通过反向压电效应在BATIO_3中诱导，这导致膜的电阻率降低多达13％。

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