Selectivity Control in Plasma Etching for Dual Damascene with OSG films

机译：双镶嵌双镶嵌膜的等离子体蚀刻选择性控制

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For dual-damascene techniques, via-first and trench-first are the two principle modes currently being developed. With these two approaches, which depends on the integration of the low k materials into the dual damascene processes, SiO2, Si3N4 or SiC may be used for either hard mask, or trench stop or barrier. Etching selectivity of low k to these materials is very critical to the success of the etching processes.

机译：对于双层镶嵌技术，通过第一和沟槽首先是目前正在开发的两个原理模式。通过这两种方法，这取决于低K材料的整合到双镶嵌过程中，SiO2，Si3N4或SiC可用于硬掩模，或沟槽停止或屏障。蚀刻低k对这些材料的选择性对于蚀刻工艺的成功非常重要。

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《The Meeting of the Electrochemical Society》|2001年||共1页
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Si-Yi Li; S. M. R. Sadjadi;
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中图分类化学工业;
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1. Robust Cu Dual Damascene Interconnects With Porous SiOCH Films Fabricated by Low-Damage Multi-Hard-Mask Etching Technology [J] . Ohtake H., Tagami M., Tada M., IEEE Transactions on Semiconductor Manufacturing . 2006,第期

机译：坚固的铜双金属镶嵌与通过低损伤多硬掩模蚀刻技术制造的多孔SiOCH薄膜互连
2. Robust Cu Dual Damascene Interconnects With Porous SiOCH Films Fabricated by Low-Damage Multi-Hard-Mask Etching Technology [J] . Ohtake H., Tagami M., Tada M., IEEE Transactions on Semiconductor Manufacturing . 2006,第4期

机译：坚固的铜双金属镶嵌与通过低损伤多硬掩模蚀刻技术制造的多孔SiOCH薄膜互连
3. Etching Feasibility of CoWP and CoWB as Selective Metallic Capping Layer in Cu Dual Damascene Interconnection [J] . Cui Yinhua, Choi Eunmi, Shim Ho Jae, Science of advanced materials . 2017,第11期

机译：CoWP和CoWB作为铜双镶嵌互连中选择性金属覆盖层的蚀刻可行性
4. Selectivity Control in Plasma Etching for Dual Damascene with OSG films [C] . Si-Yi Li, S. M. R. Sadjadi The Meeting of the Electrochemical Society . 2001

机译：双镶嵌双镶嵌膜的等离子体蚀刻选择性控制
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Selectivity Control in Plasma Etching for Dual Damascene with OSG films

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