Achieving low junction capacitance on bulk Si MOSFET using SDOI process

机译：使用SDOI工艺实现散装SI MOSFET的低结电容

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The major advantage of SOI MOSFET over bulk Si MOSFET is the extremely low junction capacitance.However bulk Si MOSFET remains to be mainstream.This is mainly due to SOI's higher wafer cost and the difficulty in dealing with its floating body effect[l,2,3],In this paper we describe a new process,SDOI,to achieve extremely low junction capacitance on bulk Si MOSFET.SDOI stands for Source Drain On Insulator.It allows the source and drain region of a MOSFET to stay over an oxide layer while the channel region remains on bulk Si.The resulted junction capacitance reduction is similar to that of SOI.Unlike SOI MOSFET,SDOI MOSFET has no floating body effect,it does not require special device models and it can be easily integrated with other bulk Si devices,such as diodes and bipolar transistors.

机译：SOI MOSFET通过批量SI MOSFET的主要优点是极低的结电容。无论批量SI MOSFET都仍然是主流。这主要是由于SOI更高的晶圆成本和难以处理其浮体效果的难度[L，2， 3]，在本文中，我们描述了一种新的过程SDOI，在散装Si MOSFET上实现极低的结电容.SDOI代表绝缘体上的源极漏极。它允许MOSFET的源极和漏极留在氧化物层上频道区域保持在散装Si上。得到的结电容减少类似于SOI.Unlike SOI MOSFET的结，SDOI MOSFET没有浮动体效应，它不需要特殊的设备模型，并且可以轻松地与其他散装SI设备集成，例如二极管和双极晶体管。

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《The Meeting of the Electrochemical Society》|2003年||共1页
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Zhongze Wang; Todd Abbott; Jigish Trivedi; Chih-Chen Cho; Mike Violette;
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Achieving low junction capacitance on bulk Si MOSFET using SDOI process

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