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Growth and characterization of self-assembled GaAs nano-structures in InGaAs/InP matrix

机译：InGaAs / InP矩阵中自组装GaAs纳米结构的生长和特征

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《International Quantum Electronics Conference》|2005年||共2页
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Sheng-Di Lin; Zi-Chang Lin; Chien-Ping Lee;
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中图分类 TN201-53;
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专利

1. Growth by molecular beam epitaxy of self-assembled InAs quantum dots on InAlAs and InGaAs lattice-matched to InP [J] . P. J. Simmonds, H. E. Beere, H. W. Li, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2007,第3期

机译：自组装InAs量子点在InAlAs和与InP晶格匹配的InGaAs上的分子束外延生长
2. Growth and characterization of strain-compensated InGaAs/GaAsSb type II multiple quantum wells on InP substrate [J] . Yonezawa Y., Hiraike R., Miura K., Physica, E. Low-dimensional systems & nanostructures . 2010,第10期

机译：InP衬底上应变补偿的InGaAs / GaAsSb II型多量子阱的生长和表征
3. Characterization of Oxides Formed on InP, InGaAs, InAlAs, and InGaAs/InAlAs Heterostructures at 300–500°C [J] . R. J. Hussey, G. I. Sproule, J. P. McCaffrey, Oxidation of Metals . 2002,第5a6期

机译：在300–500°C下在InP，InGaAs，InAlAs和InGaAs / InAlAs异质结构上形成的氧化物的表征
4. Growth and characterization of self-assembled GaAs nano-structures in InGaAs/InP matrix [C] . Sheng-Di Lin, Zi-Chang Lin, Chien-Ping Lee . 2005

机译：InGaAs / InP基体中自组装GaAs纳米结构的生长和表征
5. Growth and characterization of high-speed C-doped base InP/InGaAs heterojunction bipolar transistors using metalorganic molecular beam epitaxy. [D] . Thomas, Sunil. 1998

机译：利用金属有机分子束外延生长和表征高速掺C的基极InP / InGaAs异质结双极晶体管。
6. Optimization of MBE Growth Conditions of In0.52Al0.48As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers [O] . Piotr Gutowski, Iwona Sankowska, Tomasz Słupiński, 2019

机译：InGaAs / InAlAs / InP量子级联激光器的In0.52Al0.48As波导层MBE生长条件的优化
7. Electrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of InGaAs Quantum Wires and Dots [O] . Hirano, Tetsuro, Ito, Akira, Sato, Taketomo, 2002

机译：自组装InP纳米孔阵列的电化学形成及其作为InGaAs量子线和点的分子束外延生长的模板的用途
8. Growth and properties of InGaAs/FeAl/InAlAs/InP heterostructures for buried reflector/interconnect applications in InGaAs thermophotovoltaic devices [R] . Ringel, S. A. , Sacks, R. N. , Qin, L. , 1998

机译：用于InGaas热光电器件中埋入式反射器/互连应用的InGaas / Feal / Inalas / Inp异质结构的生长和性质

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