Effect of UV Exposure on the Photoluminescence Characteristics of Nanocrystalline Mn-Doped ZnS

机译：紫外线暴露对纳米晶体Mn掺杂Zns的光致发光特性的影响

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Upon UV exposure for the unpassivated and passivated Mn doped nanocrystalline ZnS we find increase in the PL intensity, corresponding to an increase in the radiative transition probability. The measured decay times for the unpassivated samples before and after UV exposure became shorter with higher Mn concentration. In the passivated samples, the measured decay time constant became longer with higher Mn concentrations. Over all the decay time constant for the passivated samples were shorter compared to the unpassivated samples.

机译：在UV暴露于未呈现和钝化的Mn掺杂纳米晶体Zns时，我们发现PL强度的增加，对应于辐射转变概率的增加。 UV曝光之前和之后未透过的样品的测量衰减时间变短，浓度较高。在钝化的样品中，测量的衰减时间常数随着更高的Mn浓度而变长。与未普通的样品相比，钝化样品的所有衰减时间较短。

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《International Quantum Electronics Conference》|2005年||共2页
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Almira B. Cruz; Qing Shen; Taro Toyoda;
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4. Effect of UV Exposure on the Photoluminescence Characteristics of Nanocrystalline Mn-Doped ZnS [C] . Almira B. Cruz, Qing Shen, Taro Toyoda International Quantum Electronics Conference . 2005

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Effect of UV Exposure on the Photoluminescence Characteristics of Nanocrystalline Mn-Doped ZnS

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