Normal-incident SiGe/Si MQW photodetectors operating at 1.3 um

机译：正常入射SIGE / SI MQW光电探测器在1.3 um工作

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A normal-incident SiGe/Si multiple quantum wells photodetector was reported. The structure and fabrication process of the photodetector were introduced. The photocurrent spectra measurement showed that the response spectra was expanded to 1.3 $mu@m wavelength. The quantum efficiency of the photodetector was 0.1 percent at 1.3 $mu@m and 20 percent at 0.95 $mu@m.

机译：报道了正常入射的SiGe / Si多量子阱光电探测器。引入了光电探测器的结构和制造过程。光电流光谱测量表明，响应光谱扩展到1.3 $ MU @ M波长。光电探测器的量子效率为1.3 $ mu @ m的0.1％，20％在0.95 $ mu @ m。

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《Conference on photonics technology into the 21st century: Semiconductors, microstructures, and nanostructures》|2000年||共4页
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Buwen Cheng; Chengfang Li; Qinqing Yang; Hongjie Wang; Liping Luo; Jinzhong Yu; Qiming Wang;
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专利

1. On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications [J] . Mukul K. Das, N. R. Das Optical and Quantum Electronics . 2009,第7期

机译：关于用于长波长应用的RCE Si / SiGe / Si MQW光电探测器的最佳设计
2. On optimum designs of a RCE Si/SiGe/Si MQW photodetector for long wavelength applications [J] . Mukul K. Das, N. R. Das Optical and quantum electronics . 2009,第7期

机译：关于用于长波长应用的RCE Si / SiGe / Si MQW光电探测器的最佳设计
3. Effect of Si-Ge interdiffusion on the waveguide properties of SiGe-Si MQW photodetector [J] . Yuqing Zhu, Qinqing Yang IEEE Journal of Quantum Electronics . 1997,第5期

机译：Si-Ge互扩散对SiGe-Si MQW光电探测器波导特性的影响
4. Normal-incident SiGe/Si MQW photodetectors operating at 1.3 um [C] . Buwen Cheng, Chengfang Li, Qinqing Yang, Conference on photonics technology into the 21st century: Semiconductors, microstructures, and nanostructures . 2000

机译：正常入射SIGE / SI MQW光电探测器在1.3 um工作
5. Semiconductor optical preamplifiers for use in high-speed integrated photoreceivers at 1.3 um and 1.55 um. [D] . Horton, Timothy Uel. 1998

机译：半导体光学前置放大器，用于1.3微米和1.55微米的高速集成光接收器。
6. Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate [O] . Andrew Yakimov, Victor Kirienko, Vladislav Armbrister, 2013

机译：伪基板上的宽带Ge / SiGe量子点光电探测器
7. Modulation doped SiGe-Si MQW for low-voltage high speed modulators at 1.3 mum [O] . Vonsovici A., Vescan L. 1999

机译：适用于1.3 mum的低压高速调制器的调制掺杂SiGe-Si MQW
8. Infrared Detectors Based on Si/SiGe Superlattices and Silicide/SiGe Schottky Barriers Operating beyond 12um. [R] . Ban, V. S. 1994

机译：基于si / siGe超晶格和硅化物/ siGe肖特基势垒的红外探测器工作在12um以上。

Normal-incident SiGe/Si MQW photodetectors operating at 1.3 um

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