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Common deep level in GaN

机译：甘普

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A deep level with the activation energy around 0.45-0.6 eV has persistently appeared in GaN samples grown by hydride vapor-phase epitaxy, organometallic vapor-phase epitaxy and molecular beam epitaxy. However, the origin of this deep level still remains unclear. In this study, we investigated this deep level trap E2 of GaN films by using deep level transient spectroscopy. The GaN films were grown by a conventional low pressure organometallic vapor-phase epitaxy technique with different V/III ratios. Frequency-dependent capacitance measurement was performed to determine the most proper frequency for capacitance measurements. Capacitance- voltage measurements were then applied to obtain the carrier concentrations. The carrier concentration became higher as the flow rate of NH3 got lower. The deep level E2 is found in GaN samples grown with higher V/III ratios. The trap concentration of level E2 increased with increasing NH$-3$/ flow rate. Compared with the theoretical prediction of the nitrogen antisite level in GaN, the level E2 was believed to be related to nitrogen antisites.
机译：周围0.45-0.6电子伏特的激活能深能级已经持续出现通过氢化物汽相外延，有机金属气相外延和分子束外延生长的GaN样品英寸然而，这种深层次的起源仍不清楚。在这项研究中，我们通过使用深能级瞬态谱研究了这个深陷阱能级E2 GaN薄膜。的GaN薄膜，通过用不同的V / III比的常规低压有机金属气相外延法生长。进行频率相关的电容测量来确定用于电容测量的最适当的频率。然后电容 - 电压测量施加到获得的载流子浓度。载流子浓度变得更高如NH 3的流速得到降低。深能级E2具有较高的V / III比生长的GaN样品中被发现。级E2的陷阱浓度随NH $ $ -3 /流速增加。与在GaN中的氮水平反位的理论预测相比较，电平E2被认为是相关的氮antisites。

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