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首页> 外文学位 >STUDY OF DEEP LEVELS IN (100) AND (311)B MOLECULAR BEAM EPITAXIAL GALLIUM-ARSENIDE BY CONSTANT-CAPACITANCE DEEP LEVEL TRANSIENT SPECTROSCOPY.
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STUDY OF DEEP LEVELS IN (100) AND (311)B MOLECULAR BEAM EPITAXIAL GALLIUM-ARSENIDE BY CONSTANT-CAPACITANCE DEEP LEVEL TRANSIENT SPECTROSCOPY.

机译：恒定电容深层瞬态光谱法研究（100）和（311）B分子束表型砷化镓深层。

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摘要

The study of deep level traps in molecular beam epitaxial (MBE) GaAs by constant capacitance deep level transient spectroscopy (CC-DLTS) has been divided into three parts. First, the deep level centers unique to MBE GaAs layers were identified; second, the effect of growth and annealing conditions on trap concentrations were determined; and finally, that information was applied to the study of the nature of the deep level traps in (100) and (311)B GaAs layers.;Optimization of growth parameters has been effective in reducing concentrations of various deep levels in (100) GaAs. The growth of molecular beam epitaxial (MBE) layers using dimeric As as a source material has been shown to reduce electron trap concentrations measured by deep level transient spectroscopy (DLTS) and "defect"-related luminescence. Molecular beam epitaxial layers grown on (311)B oriented substrates with the use of a metallic As source have been studied and only two (M1 and M4) of the three DLTS peaks generally associated with MBE material are detected. Silicon-doped layers have been grown simultaneously on (311)B and (100) substrates. The deep level peak labeled M3 consistently appears in layers grown on (100) substrates but is absent in five out of seven layers grown on (311)B substrates. Photoluminescence (PL) defect bound exciton peaks were weak or absent in the (311)B layers. Variations in carbon incorporation in the layers grown on the two substrate orientations were observed but no correlation could be made to the strengths of the defect lines.;The quality of the epitaxial layers from a deep level point of view was shown to be insignificantly affected by both high dislocation densities and reduced residual impurities due to substrate prebacking. However, trap concentrations were observed to change markedly under various growth parameter settings and annealing conditions. (Abstract shortened with permission of author.);The first study of deep level traps in (100) MBE GaAs layers took place over ten years ago. As many as nine traps were detected. In subsequent DLTS studies in this laboratory and in various other laboratories, levels labeled M1, M3 and M4 were consistently detected. These levels have become generally associated with (100) MBE GaAs layers.
机译：通过恒电容深能级瞬态光谱法（CC-DLTS）对分子束外延（MBE）GaAs中的深能级陷阱的研究分为三部分。首先，确定了MBE GaAs层独有的深层中心；其次，确定生长和退火条件对阱浓度的影响。最后，该信息被用于研究（100）和（311）B GaAs层中深能级陷阱的性质。优化生长参数已有效降低了（100）GaAs中各种深能级的浓度。 。已显示使用二聚体As作为源材料的分子束外延（MBE）层的生长可降低通过深能级瞬态光谱（DLTS）和“缺陷”相关的发光测量的电子陷阱浓度。已经研究了使用金属As源在（311）B取向衬底上生长的分子束外延层，并且只检测到通常与MBE材料相关的三个DLTS峰中的两个（M1和M4）。硅掺杂层已在（311）B和（100）基板上同时生长。标记为M3的深能级峰始终出现在（100）基板上生长的层中，但在（311）B基板上生长的七层中的五层中不存在。在（311）B层中，光致发光（PL）缺陷约束的激子峰微弱或不存在。观察到在两个衬底方向上生长的层中碳掺入的变化，但与缺陷线的强度没有相关性。从深层次的观点来看，外延层的质量受到显着影响高位错密度和由于衬底预衬而减少的残留杂质。但是，观察到陷阱浓度在各种生长参数设置和退火条件下显着变化。 （摘要在作者的允许下缩短。）；（100）MBE GaAs层中的深层陷阱的第一项研究是在十年前进行的。多达9个陷阱被检测到。在该实验室和其他实验室的后续DLTS研究中，始终检测到标记为M1，M3和M4的水平。这些级别通常已与（100）MBE GaAs层相关联。

著录项

  • 作者

    DEJULE, RUTHANNA YUSA.;

  • 作者单位

    University of Illinois at Urbana-Champaign.;

  • 授予单位 University of Illinois at Urbana-Champaign.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 1987
  • 页码 102 p.
  • 总页数 102
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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