Er~(3+) Photoluminescence Properties of Erbium-doped Si/SiO_2 Superlattices with sub-nm Thin Si Layers

机译：ER〜（3+）用子NM薄Si层的erbium-掺杂Si / SiO_2超晶片的光致发光性能

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The effect of varying the Si layer thickness on the Er~(3+) photoluminescence properties of Er-doped Si/SiO_2 superlattice is investigated. We find that as the Si layer thickness is reduced from 3.6 nm down to a monolayer of Si, the Er~(3+) luminescence intensity increases by over an order of magnitude. Temperature dependence of the Er~(3+) luminescence intensity and time-resolved measurement of Er~(3+) luminescence intensity identify the increase in the excitation rate as the likely cause for such an increase, and underscore the importance of the Si/SiO_2 interface in determining the Er~(3+) luminescence properties.

机译：研究了改变ER掺杂Si / SiO_2超晶格的ER〜（3+）光致发光性质上的Si层厚度的效果。我们发现，随着Si层厚度从3.6nm降至Si的单层，ER〜（3+）发光强度从一个数量级增加。 ER〜（3+）发光强度和时间分辨测量ER〜（3+）发光强度的温度依赖性识别激励率的增加，因为这一增加的可能原因，并强调了SI /的重要性SIO_2在确定ER〜（3+）发光属性时的界面。

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《Symposium F,"Nanocrystalline and Microcrystalline Semiconductor Materials and Structures"》|2001年||共6页
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Se; Jung H. Shin; Ji-Hong Jhe; Dae Won Moon; Sehun Kim; Yong Ho Ha;
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Er~(3+) Photoluminescence Properties of Erbium-doped Si/SiO_2 Superlattices with sub-nm Thin Si Layers

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