The role of nitrogen-induced localization and defects in InGaAsP(≈2N): comparison of InGaAsN grown by molecular beam epitaxy and metal-organic chemical vapor deposition

机译：氮诱导的定位和缺陷在IngaAsp中的作用（≈2％n）：通过分子束外延和金属 - 有机化学气相沉积的InGaAsn的比较

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Nitrogen vibrational mode spectra, Hall mobilities, and minority carrier diffusion lengths are examined for InGaAsN ( ≈1.1 eV bandgap) grown by molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). Independent of growth technique, annealing promotes the formation of In-N bonding, and lateral carrier transport is limited by large scale (mean free path) material inhomogeneities. Comparing solar cell quantum efficiencies for devices grown by MBE and MOCVD, we find significant electron diffusion in the MBE material (reversed from the hole diffusion occurring in MOCVD material), and minority carrier diffusion in InGaAsN cannot be explained by a "universal", nitrogen-related defect.

机译：通过分子束外延（MBE）和金属 - 有机化学气相沉积（MOCVD）来检查氮振动模式光谱，霍尔迁移率和少数型载波扩散长度。独立于生长技术，退火促进了N-N键合的形成，并且横向载流量受大规模（平均自由路径）材料的限制。比较MBE和MOCVD种植的器件的太阳能电池量子效率，我们在MBE材料中发现了显着的电子扩散（从MOCVD材料中发生的空穴扩散反转），并且InGaAsn中的少数载体扩散不能通过“通用”，氮气 - 相关的缺陷。

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《Symposium H, "Progress in semiconductor materials for optoelectronic applications"》|2002年||共8页
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Steven R. Kurtz; A. A. Allerman; J. F. Klem; R. M. Sieg; C. H. Seager; E. D. Jones;
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1. InGaAsP/lnP buried-heterostructure laser diodes grown on InP using molecular beam epitaxy and metal-organic chemical vapor deposition [J] . G. W. Pickrell, H. L. Zhang, H. W. Ren, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2008,第3期

机译：使用分子束外延和金属有机化学气相沉积法在InP上生长的InGaAsP / InP埋入异质结构激光二极管
2. Extenuation of Stress and Defects in GaN Films Grown on a Metal-Organic Chemical Vapor Deposition-GaN/c-Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy [J] . Aggarwal Neha, Krishna Shibin T. C., Goswami Lalit, Crystal growth & design . 2015,第5期

机译：等离子体辅助分子束外延在金属有机化学气相沉积-GaN / c-蓝宝石衬底上生长的GaN薄膜中的应力和缺陷的衰减
3. Characterization of InP/InGaAs Heterojunction Bipolar Transistors with Carbon-Doped Base Layers Grown by Metal-Organic Chemical Vapor Deposition and Molecular Beam Epitaxy [J] . Naotaka Kuroda, Akira Fujihara, Yoshifumi Ikenaga, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2005,第9A期

机译：金属有机化学气相沉积和分子束外延生长碳掺杂基层的InP / InGaAs异质结双极晶体管的特性
4. The role of nitrogen-induced localization and defects in InGaAsP(≈2N): comparison of InGaAsN grown by molecular beam epitaxy and metal-organic chemical vapor deposition [C] . Steven R. Kurtz, A. A. Allerman, J. F. Klem, Symposium H, "Progress in semiconductor materials for optoelectronic applications" . 2002

机译：氮诱导的定位和缺陷在IngaAsp中的作用（≈2％n）：通过分子束外延和金属 - 有机化学气相沉积的InGaAsn的比较
5. Feasibility study of III-nitride-based transistors grown by ammonia-based metal-organic molecular beam epitaxy. [D] . Billingsley, Daniel D. 2010

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The role of nitrogen-induced localization and defects in InGaAsP(≈2N): comparison of InGaAsN grown by molecular beam epitaxy and metal-organic chemical vapor deposition

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