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Performance prediction of cryogenically cooled silicon crystal monochromator

机译:低温冷却硅晶体单色仪的性能预测

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To predict the performance of the cryogenically cooled silicon crystal, intensive studies have been carried out to sort out the influences of various parameters, such as heat load power and power distribution, cooling coefficient, and beam size. The thermal slope error of the crystal is calculated by finite element modeling. Quadratic law was applied to calculate the rocking-curve width. Heat load tests were also performed with a channel-cut silicon monochromator on beamline ID09 at the European Synchrotron Radiation Facility (ESRF). The silicon crystal is indirectly cooled from the sides by liquid nitrogen. Measured rocking-curve widths are compared with those calculated by finite element modeling. When we include the broadening from the intrinsic rocking-curve width and mounting strain, the calculated rocking-curve width versus heat load is in excellent agreement with experiment.
机译:为了预测低温冷却的硅晶体的性能,已经进行了密集的研究,以解决各种参数的影响,例如热负荷功率和配电,冷却系数和光束尺寸。晶体的热斜率误差通过有限元建模计算。应用二次法律来计算摇摆曲线宽度。还在欧洲同步辐射设施(ESRF)上的光束线ID09上的通道切割硅单色器进行热负荷测试。硅晶体通过液氮从侧面间接冷却。将测量的摇摆曲线宽度与通过有限元建模计算的那些进行比较。当我们包括从内在摇摆曲线宽度和安装应变的扩大时,计算出的摇摆曲线宽度与热负荷与实验非常一致。

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