Synchrotron radiation-excited etching of compound semiconductor, ZnTe, was investigated using the SF6 and Ar gases. In the case of SF_6 gas, the ZnTe was not etched but thin film of a fluorine containing material, e.g. ZnF_2, was deposited on the surface of ZnTe. On the other hand, ZnTe was etched by using Ar gas under the negative sample bias to the sample. The etched pattern obtained by placing a Ni mesh showed that only the irradiated area was etched. The etching rate was estimated to be around 4.5×10~(–2) A/mA·min.
展开▼
