CVD Filling of Narrow Deep 4H-SiC Trenches in a Quasi-Selective Epitaxial Growth Mode

机译：准选择性外延生长模式中的CVD填充窄深4H-SIC沟槽

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By mapping the flow rates of source and HCI gases dependent growth rates, the CVD process window of a quasi-selective epitaxial growth (quasi-SEG) was first found for a 5-μm 4H-SiC trench. It ensures an extremely low risk of void defects generation due to very thin epilayers on the mesa top. Based on the acquired knowledge, a 25-μm 4H-SiC trench with an aspect ratio up to~10 was completely filled in the quasi-SEG mode.

机译：通过映射源源和HCI气体的流速依赖性生长速率，首先发现了准选择性外延生长（准选择性外延生长的CVD处理窗口，用于5μm4H-SiC沟槽。它确保了由于台面上的非常薄的脱节剂而产生极低的空隙缺陷的风险。基于所获取的知识，在准筛选模式下完全填充具有高达〜10的纵横比的25μm的4H-SiC沟槽。

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《International Conference on Silicon Carbide and Related Materials》|2018年|xxvi 1016 p. :|共4页
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Shiyang Ji; Ryoji Kosugi; Kazutoshi Kojima; Kazuhiro Mochizuki; Yasuyuki Kawada; Kohei Adachi; Shingo Saito; Akiyo Nagata; Yasuko Matsukawa; Yoshiyuki Yonezawa; Sadafumi Yoshida; Hajime Okumura;
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中图分类 TN304.1-532;
关键词
4H-SiC; super-junction; trench filling; CVD; p-type; selective epitaxial growth; HCI;

机译：4H-SIC;超结;沟槽填充;CVD;p型;选择性外延生长;HCI;

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专利

1. CVD Filling of Narrow Deep 4H-SiC Trenches in a Quasi-Selective Epitaxial Growth Mode [J] . Shi Yang Ji, Ryoji Kosugi, Kazutoshi Kojima, Materials science forum . 2018,第期

机译：准选择性外延生长模式中窄深4H-SiC沟槽的CVD填充
2. Influence of growth pressure on filling 4H-SiC trenches by CVD method [J] . Ji Shiyang, Kojima Kazutoshi, Kosugi Ryoji, Japanese journal of applied physics . 2016,第1S期

机译：生长压力对CVD法填充4H-SiC沟槽的影响
3. A Study of CVD Growth Parameters to Fill 50-μm-Deep 4H-SiC Trenches [J] . Shi Yang Ji, Ryoji Kosugi, Kazutoshi Kojima, Materials science forum . 2019,第期

机译：CVD生长参数填充50微米深4H-SIC沟槽的研究
4. CVD Filling of Narrow Deep 4H-SiC Trenches in a Quasi-Selective Epitaxial Growth Mode [C] . Shiyang Ji, Ryoji Kosugi, Kazutoshi Kojima, International Conference on Silicon Carbide and Related Materials . 2018

机译：准选择性外延生长模式中的CVD填充窄深4H-SIC沟槽
5. RPCVD Growth of Epitaxial Si-Ge-Sn Alloys for Optoelectronics Applications [D] . Margetis, Joe. 2018

机译：用于光电子应用的外延Si-Ge-Sn合金的RPCVD生长
6. Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions [O] . Jinlan Li, Chenxu Meng, Le Yu, 2020

机译：各种缺陷对4H-SiC肖特基二极管性能的影响及其与外延生长条件的关系
7. High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor [O] . Chowdhury, Iftekhar, Chandrasekhar, MVS, Klein, Paul B, 2010

机译：使用二氯硅烷的高生长速率4H-siC外延生长热壁CVD反应器

CVD Filling of Narrow Deep 4H-SiC Trenches in a Quasi-Selective Epitaxial Growth Mode

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