Subthreshold Defect Generation by Intense Electron Beams in Semiconductors for Microelectronics

机译：微电子中的半导体中强度电子束的亚阈值缺陷产生

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Conversion of n- into p-conducting silicon by electron bombardment was first observed with subthreshold intense electron beams of 75 keV energy and confirmed later by several groups. These results received attention again in view of microelectronics and nanotechnology with respect to the shorter than optical focusing conditions for electrons. In order to continue these studies with subthreshold defect generation we report on experiments with optical detection of the changes as observed before in silicon together with the changes from n- into p- conductivity. Further interest is in production of very low cost solar cells from conducting polymers like polyacetylene and avoiding chemical methods leading to formation of highly aggressive waste. The near band gap generation of defects by electron irradiation has been detected in optical absorption spectra. We aim to analyze the stability of the generated defects in view of crystal defects or dangling bond generation in the semiconductors.

机译：首先用电子轰击将N-进入P导电硅的转化为75keV能量的亚keTheshold强能量，并通过几组进行确认。鉴于微电子和纳米技术相对于电子的微电子和纳米技术，这些结果再次受到关注。为了继续使用亚阈值缺陷生成的研究，我们报告了在硅中观察到的变化的光学检测的实验以及从n到p导电性的变化。进一步的兴趣是在产生非常低的成本太阳能电池中，从诸如聚乙炔这样的聚合物和避免形成高度侵略性废物的化学方法。在光学吸收光谱中检测到电子照射的近带隙产生缺陷。考虑到半导体中的晶体缺陷或悬空债券一代，我们的目的是分析所产生的缺陷的稳定性。

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《Conference on Microelectronics: Design, Technology, and Packaging》|2006年||共7页
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M. Ghoranneviss; A.H. Sari; M.H. Hantehzadeh; H. Hora; F. Osman; K.R. Doolan; R. Hoepfl; G. Benstetter; SPIE-The International Society for Optical Engineering; Queensland University of Technology(AU);
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中图分类半导体技术;
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Subthreshold Defect Generation by Intense Electron Beams in Semiconductors for Microelectronics

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