• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>European Conference on Lasers Electro-Optics and the International Quantum Electronics Conference >Afterpulsing-free 80MHz single-photon detection at 1550 nm using an InGaAs/InP avalanche photodiode operated with sinusoidal gating
【24h】

Afterpulsing-free 80MHz single-photon detection at 1550 nm using an InGaAs/InP avalanche photodiode operated with sinusoidal gating

机译：在1550nm下使用indaas / Inp雪崩光电二极管在1550nm下进行后续80mHz单光子检测，用正弦门控运行

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

A single-photon detector (SPD) at 1550 nm is essential for quantum key distribution (QKD) based on optical fiber links. A cooled InGaAs/InP avalanche photodiode (APD) is a candidate for the SPD, because it has a high detection efficiency with a low dark count probability. However, the maximum detection speed (the repetition frequency of the gate) was very slow (<10MHz), which is due to the afterpulsing phenomenon. Recently we proposed the sinusoidal gating scheme and demonstrated the high-speed (500～800MHz) single-photon detection with a low afterpulsing probability. In the scheme, the overall afterpulsing probability is somewhat high when the gating frequency is lower than 100MHz. In this paper, we report on the afterpulsing-free (<1%) 80MHz single-photon detection using the sinusoidal gating. The experimental setup is schematically depicted in Fig. 1. The 80MHz mode-locked titanium sapphire laser emits ～90 fs optical pulses at 810 nm. The wavelength of the optical pulses is converted into 1550 nm by the optical parametric oscillator (OPO). The 1550 nm optical pulses (～120 fs) are attenuated to the single-photon level and led to the APD (EPITAXX EPM239BA) cooled to -35 degrees Celsius. The cooled APD was operated with sinusoidal gating. In the sinusoidal gating, the gate width increases when we reduce the gating frequency with the V{sub}(DC) constant, which results in the increase of the afterpulsing probability. When the gating frequency was set to 80MHz corresponding to the repetition frequency of the laser pulses, the afterpulsing probability was high (>10%). On the other hand, we can obtain the lowest afterpulsing probability when the gating frequency is approximately 500MHz at which the gate width is close to the optical response time of the APD. Therefore, the 6th harmonics of the laser monitor signal was used for the gate signal. The 6th harmonics (480MHz) was generated by the frequency multiply circuit (FMC) that was composed of amplifiers and band-pass filters. The phase of the 6th harmonics was locked to the 80 MHz mode-locked laser pulse. The 480MHz sinusoidal voltage was applied to the APD. The peak-to-peak amplitude of the sinusoidal voltage was 12V. Using the band elimination filter, the transferred gate signal was removed. The avalanche signal passing through the band elimination filter was led to the counter after being amplified by 20dB. The residual noise level after the amplification was 3mV, therefore the discrimination level of the counter was set to 4mV.
机译：在1550nm处的单光子检测器（SPD）基于光纤链路是用于量子密钥分配（QKD）是必不可少的。将冷却的InGaAs /磷化铟雪崩光电二极管（APD）是用于SPD的候选，因为它具有以低的暗计数概率高的检测效率。然而，最大的检测速度（在栅极的重复频率）是非常缓慢的（<10MHz的），这是由于afterpulsing现象。最近，我们提出了正弦选通方案，并展示了高速（500〜800MHz的）单光子检测具有低afterpulsing概率。在该方案中，整体afterpulsing概率偏高时，选通频率小于100MHz。在本文中，我们使用所述正弦门控的自由afterpulsing-（<1％）的80MHz的单光子检测报告。实验装置示意性地描绘于图1的80MHz的锁模钛兰宝石激光器发射〜90个飞秒光脉冲在810纳米。光脉冲的波长由光学参量振荡器（OPO）转换成1550纳米。 1550个纳米的光脉冲（〜120个FS）被衰减到单光子水平，并导致冷却至摄氏-35度的APD（EPITAXX EPM239BA）。将冷却的APD用正弦门控操作。在正弦选通，栅极宽度增大时，我们减少与V {子}（DC）恒定，这导致afterpulsing概率的增加选通频率。当门控频率设定为对应于激光脉冲的重复频率为80MHz时，afterpulsing概率高（> 10％）。在另一方面中，我们可以在选通频率是500MHz的约在其栅极宽度是接近APD的光学响应时间获得最低afterpulsing概率。因此，用于将栅极信号的激光监控信号的第六谐波。在第六次谐波（为480MHz）通过该组成放大器和带通滤波器的频率乘法电路（FMC）中产生。在第六次谐波的相位被锁定到80MHz的锁模激光脉冲。在为480MHz的正弦电压施加到APD。正弦电压的峰 - 峰值为12V。使用带阻滤波器，除去转移栅极信号。经过带阻滤波器的雪崩信号通过20分贝放大后引导至计数器。放大后的残留噪声电平为3mV的，因此该计数器的鉴别电平被设置为的4mV。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号