Room-Temperature InAs/InP Quantum-Dot Photonic Crystal Microlasers Using Cavity-Confined Slow Light

机译：室温INAS / INP量子点光子晶体微塑性微加工使用腔孔慢灯

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We achieved room temperature laser operation, around 1.5 μm, with a single layer of InAs/InP quantum dots in a photonic crystal structure using confined slow light. The lasing threshold is a few hundred μW.

机译：我们达到了约1.5μm的室温激光操作，使用狭窄的慢光，在光子晶体结构中具有单层InAs / InP量子点。激光阈值是几百μW。

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《Conference on Lasers Electro-Optics Quantum Electronics and Laser Science Conference》|2007年||共2页
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F. Bordas; C. Seassal; E. Dupuy; P. Regreny; M. Gendry; M. J. Steel; A. Rahmani;
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中图分类 TN24-53;
关键词
Semiconductor lasers; Photonic Crystal; Cavity Quantum Electrodynamics;

机译：半导体激光器;光子晶体;腔量子电动动力学;

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专利

1. Slow Light Effect and Multimode Lasing in a Photonic Crystal Waveguide Microlaser [J] . 邢名欣, 郑婉华, 周文君, 中国物理快报：英文版 . 2010,第002期

机译：光子晶体波导微激光器中的慢光效应和多模激射
2. Designing a low-threshold quantum-dot laser based on a slow-light photonic crystal waveguide [J] . Taleb Hussein, Moravvej-Farshi Mohammad Kazem Applied optics . 2017,第35期

机译：基于慢光光子晶体波导的低阈值量子点激光
3. Slow and fast light propagation and controllable switch at lambda=1.55 mu m in a photonic crystal with a defect layer doped by an InAs/GaAs quintuple-coupled quantum dot molecule nanostructure [J] . Shiri Jalil Laser Physics: An International Journal devoted to Theoretical and Experimental Laser Research and Application . 2019,第5期

机译：在λ=1.55μm的慢速和快速光传播和可控开关在光子晶体中，具有由InAs / GaAs Quintuple耦合量子点分子纳米结构掺杂的缺陷层
4. Room-Temperature InAs/InP Quantum-Dot Photonic Crystal Microlasers Using Cavity-Confined Slow Light [C] . F. Bordas, C. Seassal, E. Dupuy, Conference on Lasers Electro-Optics Quantum Electronics and Laser Science Conference . 2007

机译：室温INAS / INP量子点光子晶体微塑性微加工使用腔孔慢灯
5. Implementation of Efficient Light Control Platforms in Integrated Photonics: InP Photonics Crystal Arrays, Modetector & Grating Couplers [D] . Zhang, Ruoyu 2019

机译：集成光子学中高效光控制平台的实现：InP光子学晶体阵列，调制器和光栅耦合器
6. Extracting more light for vertical emission: high power continuous wave operation of 1.3-μm quantum-dot photonic-crystal surface-emitting laser based on a flat band [O] . Huan-Yu Lu, Si-Cong Tian, Cun-Zhu Tong, 2019

机译：提取更多光以进行垂直发射：基于平坦带的1.3μm量子点光子晶体表面发射激光器的大功率连续波操作
7. Room temperature low-threshold InAs/InP quantum dot single mode photonic crystal microlasers at 1.5 mu m using cavity-confined slow light [O] . Bordas, F, Seassal, C, Dupuy, E, 2009

机译：使用腔受限慢光在1.5μm的室温低阈值InAs / InP量子点单模光子晶体微激光器
8. Room-temperature continuous operation of InAsSb quantum-dot lasers near 2 mu m based on (100) InP substrate [R] . Qui, Y., Uhl, D., Keo, S. 2003

机译：基于（100）Inp衬底，Inassb量子点激光器的室温连续操作接近2μm

Room-Temperature InAs/InP Quantum-Dot Photonic Crystal Microlasers Using Cavity-Confined Slow Light

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