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首页> 外文会议>International Symposium on Ultra Clean Processing of Semiconductor Surfaces >Improved Cleaning Process for Etch Residue Removal in an Advanced Copper/low-k Device without the use of DMAC (dimethylacetamide)
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Improved Cleaning Process for Etch Residue Removal in an Advanced Copper/low-k Device without the use of DMAC (dimethylacetamide)

机译：改进的清洁过程，用于蚀刻残留物在未经使用DMAC（二甲基乙酰胺）中的高级铜/低k装置中的去除

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Plasma dry etching processes are commonly used to fabricate sidewalls of trenches and vias for copper/low-k dual damascene devices. Typically, some polymers remain in the trench and at the via top and sidewall. Other particulate etch residues are may remained in the bottom and on the sidewalls of vias. Generally, the particulate consists of mixtures of copper oxide with polymers. The polymers on the sidewalls and the particulate residues at the bottom of vias must be removed prior to the next process step. Small amounts of polymer are intentionally left on the sidewalls of trenches and vias during the etching in order to achieve a vertical profile and to protect the low-k materials under the etching mask. Until now, the industry has relied mainly on organic solvent containing mixtures to clean etch/ash residues from such devices. The effectiveness of available residue removers varies with the specific process and also depends on which new integration materials are used. New materials typically include Cu, TaN, low-k dielectrics and others. Solvent content is thought to aid the removal of polymer residues and particulates produced during plasma dry etching processes. Therefore, in the past we have used a residue remover which contains DMAC (dimethylacetamide). But the use of DMAC is banned in microelectronic fabrication facilities in Europe because of its toxicity. Thus we wanted to find and evaluate a DMAC-free residue remover for removing polymer residues while maintaining high selectivity to the copper and ILD films.
机译：等离子体干蚀刻工艺通常用于制造铜/低k双镶嵌装置的沟槽侧壁和通孔。通常，一些聚合物保留在沟槽中和通过顶部和侧壁。其他颗粒蚀刻残基可以留在底部和通孔的侧壁上。通常，颗粒由与聚合物的氧化铜的混合物组成。必须在下一过程步骤之前除去侧壁上的聚合物和孔底部的颗粒残留物。在蚀刻期间有意留在沟槽的侧壁和通孔上的少量聚合物，以实现垂直轮廓并保护低k材料在蚀刻掩模下方。到目前为止，该行业主要依赖于含有混合物的有机溶剂，以清洁来自这些装置的蚀刻/灰分残余物。可用残留物残余物的有效性随特定过程而变化，并且还取决于使用新的整合材料。新材料通常包括Cu，Tan，低k电介质等。认为溶剂含量有助于去除在血浆干蚀刻过程中产生的聚合物残基和颗粒。因此，在过去，我们使用含有DMAC（二甲基乙酰胺）的残基去除剂。但由于其毒性，在欧洲微电子制造设施中禁止使用DMAC。因此，我们想发现和评估用于除去聚合物残留物的无DMAC残余物，同时保持对铜和ILD薄膜的高选择性。

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