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The optical and crystalline structure properties of ZnO thin films grown by RF magnetron sputtering

机译：射频磁控溅射生长ZnO薄膜的光学和晶体结构性质

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ZnO thin films were epitaxially grown on Al_2O_3(0001) single crystalline substrate by RF magnetron sputtering. The films were grown at the substrate temperature of 550 deg C and 600 deg C for 1 h and at a power of 60-120 W. The crystalline structure of the ZnO films was analyzed by 4-circle X-ray diffraction and backscattering (BS)/channeling. The FWHM of XRD theta -rocking curve increase from 9.45 to 18 arc-min, as the RF power increased from 80 to 120 W at 550 deg C. In-plane ZnO growth on sapphire. (0001) substrate at 550 deg C and at 80 W was found to be ZnO [1010] || Al_2O_3[1120}, indicating a 30 deg rotation of ZnO unit cell about the sapphire (0001) substrate. For a specimen that was grown at an RF power of 120 W, 550 deg C, 1 h, the FWHM of XRD theta -rocking curve was 7.79 arc-min. In BS/channeling studies, the films deposited at 120 W, 600 deg C showed good crystallinity with the channeling yield minimum (x_(min)) of only 5
机译：通过射频磁控溅射在Al_2O_3（0001）单晶衬底上外延生长ZnO薄膜。薄膜在550摄氏度和600摄氏度的衬底温度下以及60-120瓦的功率下生长1小时。ZnO薄膜的晶体结构通过4圈X射线衍射和反向散射（BS ）/频道。 XRDθ摇摆曲线的FWHM从9.45增加到18 arc-min，这是因为550摄氏度时RF功率从80 W增加到120W。蓝宝石上面内ZnO的生长。在550摄氏度和80 W下的（0001）衬底为ZnO [1010] ||。 Al_2O_3 [1120}，表示ZnO晶胞围绕蓝宝石（0001）衬底旋转了30度。对于在120 W，550℃，1 h的RF功率下生长的标本，XRDθ摇摆曲线的FWHM为7.79 arc-min。在BS /通道研究中，在120 W，600摄氏度下沉积的薄膜显示出良好的结晶度，且通道屈服最小值（x_（min））只有5

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