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Stress engineering using AlN/GaN superlattices for epitaxy of GaN on 200 mm Si wafers

机译：使用ALN / GAN超晶格的压力工程在200 mm Si晶片上的GaN外延

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Stress control using AlN/GaN superlattices (SLs) for epitaxy of GaN on 200 mm Si (111) substrates is reported. Crack-free 2 μm GaN layers were grown over structures containing 50 to 100 pairs of 3-5 nm AlN/10-30 nm GaN SLs. Compressive and tensile stress can be precisely adjusted by changing the thickness of the AlN and GaN layers in the SLs. For a constant period thickness, the effects of growth conditions, such as growth rate of GaN, V/III ratio during AlN growth, and growth temperature, on wafer stress were investigated.

机译：报道了对200mM Si（111）衬底上的GaN外延的ALN / GaN超晶格（SLS）的应力控制。在含有50至100纳米ALN / 10-30nm GaN SLS的结构上生长无裂缝2μmGaN层。可以通过改变SLS中的ALN和GaN层的厚度来精确调节压缩和拉伸应力。对于恒定周期厚度，研究了生长条件的影响，例如GaN的生长速率，v / III比在AlN生长期间和生长温度，晶片胁迫期间。

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《Materials Research Society Meeting》|2014年||共6页
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Jie Su; Eric A. Armour; Balakrishnan Krishnan; Soo Min Lee; George D. Papasouliotis;
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专利

1. Stress engineering with AlN/GaN superlattices for epitaxial GaN on 200 mm silicon substrates using a single wafer rotating disk MOCVD reactor [J] . Jie Su, Eric A. Armour, Balakrishnan Krishnan, Journal of Materials Research . 2015,第19期

机译：使用单晶片转盘MOCVD反应器对200 mm硅衬底上的外延GaN进行AlN / GaN超晶格应力工程
2. Role of an ultra-thin AlN/GaN superlattice interlayer on the strain engineering of GaN films grown on Si(110) and Si(111) substrates by plasma-assisted molecular beam epitaxy [J] . Shen X.Q., Takahashi T., Rong X., Applied Physics Letters . 2013,第23期

机译：超薄AlN / GaN超晶格中间层在等离子体辅助分子束外延生长在Si（110）和Si（111）衬底上生长的GaN膜的应变工程中的作用
3. Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111) [J] . Ravikiran L., Radhakrishnan K., Dharmarasu N., Journal of Applied Physics . 2013,第12期

机译：AlN / GaN应力缓解层的应变状态及其对100mm Si（111）上氨分子束外延生长的GaN缓冲层的影响
4. Stress engineering using AlN/GaN superlattices for epitaxy of GaN on 200 mm Si wafers [C] . Jie Su, Eric A. Armour, Balakrishnan Krishnan, Materials Research Society Meeting . 2014

机译：使用ALN / GAN超晶格的压力工程在200 mm Si晶片上的GaN外延
5. Surface Engineering of GaN and Interface Engineering of Si/GaN Heterostructures for Energy-Efficient Semiconductor Devices [D] . Kim, Kwangeun. 2018

机译：用于节能半导体器件的Si / GaN异质结构的GaN和界面工程的表面工程
6. The role of Si in GaN/AlN/Si(111) plasma assisted molecular beam epitaxy: polarity and inversion [O] . Alexana Roshko, Matthew Brubaker, Paul Blanchard, -1

机译：Si在GaN / AlN / Si（111）等离子体辅助分子束外延中的作用：极性和反型
7. Near infrared absorption and room temperature photovoltaic response in AlN/GaN superlattices grown by metal-organic vapor-phase epitaxy [O] . Baumann, Esther, Giorgetta, Fabrizio R., Hofstetter, Daniel, 2008

机译：金属有机气相外延生长的AlN / GaN超晶格中的近红外吸收和室温光伏响应
8. Growth of Single Crystals and Fabrication of GaN and AlN Wafers [R] . Sitar, Z. , Schlesser, R. 2006

机译：单晶的生长和GaN和alN晶片的制备

Stress engineering using AlN/GaN superlattices for epitaxy of GaN on 200 mm Si wafers

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