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首页> 外文会议>SPIE Conference on Photonic and phononic crystal materials and devices >GaAs-based woodpile photonic crystal fabricated by two-directional etching method
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GaAs-based woodpile photonic crystal fabricated by two-directional etching method

机译：基于GaAs的木材光子晶体，由双向蚀刻方法制造

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A complete photonic band gap inhibits light propagation in all directions regardless of the polarization. This likely provides a means of molding light at the level of physical limits. For example, a complete PBG can be applied to construct nanocavities with ultra-high quality (Q) factor while maintaining a small mode volume, and low-loss waveguide. These are useful for the applications, such as thresholdless lasers, nonlinear optics and 3D optics. Only threedimensional (3D) photonic crystals can possess a complete band gap. However, the application of 3D photonic crystal is restricted because of the difficulties in precisely fabricating the structures in optical wavelength. Here, we report the fabrication of large-area woodpile photonic crystal in GaAs at 1.55 μm wavelength by two-directional etching method without wafer bonding technique. A woodpile with 40 x 55 x 2.25 unit cells is fabricated in a two-patterning process, in which high-resolution electron beam lithography (EBL) defines 2D patterns, and then chemically assisted ion beam etching (CAIBE) provides high-aspect-ratio, anisotropic and deep GaAs etching at an angle of 45 degree relative to the wafer surface. The two-directional etching is a simple method to fabricate high-precision woodpile photonic crystals. The only alignment required in this process is performed by EBL overlay, which has a resolution of less than 30 nm. With our designs of ultra-high-Q nanocavities by unit cell size modulation, we can construct woodpile nanocavities with active materials, such as epitaxially-grown quantum well (QW) and quantum dot (QD) layers, using the same fabrication method without wafer bonding process.
机译：无论偏振如何，完全光子带隙抑制了所有方向的光传播。这可能在物理限制水平下提供模制光的方法。例如，可以应用完整的PBG来构建具有超高质量（Q）因子的纳米蜂节，同时保持小模式体积和低损耗波导。这些对应用程序有用，例如阈值激光器，非线性光学和3D光学器件。只有三维（3D）光子晶体可以具有完整的带隙。然而，3D光子晶体的应用受到限制，因为精确地制造了光波长中的结构的困难。这里，通过双向蚀刻方法在没有晶片键合技术的双向蚀刻方法将GaAs中的大面积落叶光子光子晶体的制造。具有40×55×2.25单元电池的木材在两个图案化过程中制造，其中高分辨率电子束光刻（EBL）限定了2D图案，然后化学辅助离子束蚀刻（枢塞）提供高纵横比相对于晶片表面以45度的角度蚀刻的各向异性和深度GaAs。双向蚀刻是制造高精度磨石光子晶体的简单方法。通过EBL覆盖来执行该过程中所需的唯一对齐，其分辨率小于30nm。通过我们通过单位电池尺寸调制设计超高Q纳米瓦，我们可以使用与没有晶片的相同的制造方法构建具有活性材料的木材纳米覆盖物，例如外延生长的量子阱（QW）和量子点（QD）层粘合过程。

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