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GaAs-based woodpile photonic crystal fabricated by two-directional etching method

机译：双向刻蚀法制备GaAs基木桩光子晶体

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A complete photonic band gap inhibits light propagation in all directions regardless of the polarization. This likely provides a means of molding light at the level of physical limits. For example, a complete PBG can be applied to construct nanocavities with ultra-high quality (Q) factor while maintaining a small mode volume, and low-loss waveguide. These are useful for the applications, such as thresholdless lasers, nonlinear optics and 3D optics. Only three-dimensional (3D) photonic crystals can possess a complete band gap. However, the application of 3D photonic crystal is restricted because of the difficulties in precisely fabricating the structures in optical wavelength. Here, we report the fabrication of large-area woodpile photonic crystal in GaAs at 1.55 μm wavelength by two-directional etching method without wafer bonding technique. A woodpile with 40×55×2.25 unit cells is fabricated in a two-patterning process, in which high-resolution electron beam lithography (EBL) defines 2D patterns, and then chemically assisted ion beam etching (CAIBE) provides high-aspect-ratio, anisotropic and deep GaAs etching at an angle of 45 degree relative to the wafer surface. The two-directional etching is a simple method to fabricate high-precision woodpile photonic crystals. The only alignment required in this process is performed by EBL overlay, which has a resolution of less than 30 nm. With our designs of ultra-high-Q nanocavities by unit cell size modulation, we can construct woodpile nanocavities with active materials, such as epitaxially-grown quantum well (QW) and quantum dot (QD) layers, using the same fabrication method without wafer bonding process.
机译：完整的光子带隙会阻止光在所有方向上传播，无论偏振如何。这可能提供了一种在物理极限水平上成型光的方法。例如，可以将完整的PBG应用于构建具有超高质量（Q）因子的纳米腔，同时保持小模量和低损耗波导。这些对于无阈值激光器，非线性光学和3D光学等应用很有用。只有三维（3D）光子晶体才能拥有完整的带隙。然而，由于难以精确地制造光学波长的结构，因此3D光子晶体的应用受到限制。在这里，我们报道了通过双向蚀刻方法在没有晶片键合技术的情况下以1.55μm波长在GaAs中制造大面积柴堆光子晶体。通过两次构图工艺制造具有40×55×2.25晶胞的木桩，其中高分辨率电子束光刻（EBL）定义2D图案，然后化学辅助离子束刻蚀（CAIBE）提供高纵横比，相对于晶片表面成45度角的各向异性深GaAs蚀刻。双向蚀刻是一种制造高精度木桩光子晶体的简单方法。此过程中唯一需要的对齐方式是通过EBL覆盖执行，其分辨率小于30 nm。通过我们通过单位晶胞尺寸调制设计的超高Q纳米腔，我们可以使用无晶圆的相同制造方法，使用外延生长的量子阱（QW）和量子点（QD）层等活性材料构建木桩纳米腔。粘接过程。

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