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首页> 外文会议>International Conference on Sintering >GRAIN GROWTH OF Β-Si_3N_4 USING Y_2O_3 AND Al_2O_3 AS SINTERING AIDS
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GRAIN GROWTH OF Β-Si_3N_4 USING Y_2O_3 AND Al_2O_3 AS SINTERING AIDS

机译：β-Si_3N_4的晶粒生长使用Y_2O_3和AL_2O_3作为烧结辅助剂

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摘要

The mechanical properties of silicon nitride ceramics are closely linked to the a-p phase transformation. Spark plasma sintering (SPS) technique has been used to density pure a-Si_3N_4 commercial powder, using Y_2O_3 and Al_2O_3 as additives; from 2.5 and 5.0 wt% and 1.5 and 3 wt%, respectively. Such powder admixtures were previously spray-dried at 160°C in such a way that powder was thoroughly homogenized. The sintering treatment included: 3 to 20 min holding time, 38 MPa axial load, sintering temperature of 1500°C and heating rate of 300°C/min. The maximum relative density developed on studied specimens is nearly 99% of theoretical value, which corresponds to 2M-series specimens and could only be attained once the p-phase nucleated from the α-silicon nitride matrix. X-ray diffraction (XRD) and scanning electron microscope (SEM) analyses confirmed the presence of two mains phases in the resultant microstructurés: a- and β-Si_3N_4. Both the β-Si_3N_4 grain growth and the role that different amount of additives can play during SPS-sintering are analyzed.
机译：氮化硅陶瓷的机械性能与A-P相转化紧密相连。火花等离子体烧结（SPS）技术已用于密度纯A-Si_3N_4商业粉末，使用Y_2O_3和AL_2O_3作为添加剂;从2.5和5.0wt％和1.5和3wt％。预先以160℃在160℃下喷雾干燥这种粉末混合物，使得粉末彻底均匀化。烧结处理包括：3至20分钟保持时间，38MPa轴向载荷，烧结温度为1500℃，加热速率为300℃/ min。所研究的标本开发的最大相对密度接近了99％的理论值，其对应于2M系列样本，只能在从α-氮化硅基质中核成核的p相来获得。 X射线衍射（XRD）和扫描电子显微镜（SEM）分析证实了所得微观结构中的两个电源阶段的存在：A-和β-Si_3N_4。分析了β-Si_3N_4晶粒生长和不同量的添加剂在SPS烧结期间可以发挥的作用。

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