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首页> 外文会议>International Conference on Crystalline Photovoltaics >Investigation of ablation mechanisms for selective laser ablation of silicon nitride layers
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Investigation of ablation mechanisms for selective laser ablation of silicon nitride layers

机译：氮化硅层选择性激光烧蚀的消融机制研究

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In this work SiN_x deposited on silicon was locally ablated using laser irradiation. The focus was set on the investigation of the ablation mechanisms where a picosecond (ps) pulse laser is used with three wavelengths 1064, 532, 355 nm. The ablated areas were characterized by light microscopy and the threshold fluences were determined for various layer thicknesses. Furthermore, four-probe sheet-resistance and SunsV_(oc) measurements were conducted. Light microscopy images were taken and compared to simulated color maps, which were calculated from spectral reflection coefficients. The results of sheet resistance and SunsV_(oc) measurements show an influence on the underlying silicon for all three wavelengths used. However, light microscopy images reveal for the first time a change from indirect ablation (liftoff) to partial lift-off for a thin a-SiN_x:H-layer (n ≈ 2.1, t ≈ 75 nm) by using a VIS picosecond laser. Thus, a first step towards selective laser ablation was made of dielectrics.
机译：在这项工作中SiN_x沉积在硅，使用激光照射局部烧蚀。重点是，其中皮秒（ps）的脉冲激光被用于具有三个波长的1064，532，355处的烧蚀机制的调查设置。通过光学显微镜的消融区域进行了表征，并测定各种层厚度的阈值能量密度。此外，四探针片电阻和SunsV_（OC）的测量进行的。光显微镜图像拍摄，并与模拟彩色图，这是从光谱反射系数来计算。薄层电阻和SunsV_（OC）测量的结果显示了所使用的所有三个波长的底层硅上产生影响。通过使用VIS皮秒激光H-层（n≈2.1，T≈75纳米）：然而，光学显微镜图像揭示首次从间接消融（剥离）的变化，以部分剥离用于薄一个-SiN_x。因此，朝向选择性激光烧蚀第一步骤制成的电介质。

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