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The Effect of Substrate Temperature on the Formation of ITO Thin Films

机译：基材温度对ITO薄膜形成的影响

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Indium tin oxide (ITO) used in many applications such as electronic and optical devices were deposited on the soda lime glass substrate by an electron beam evaporation techniques from a mixture of 90wt% of In_2O_3 and 10wt% of SnO_2. The physical, electrical and optical properties of the ITO films were determined as a function of substrate temperature. The films deposited at 200°C showed optimum properties with a strong diffraction peak having a preferred orientation along the [111] direction. Experimental results showed that sheet resistance and transmittance of the ITO film increased with an increase in substrate temperature. Surface roughness increased slightly as a function of substrate temperature because of grain growth.
机译：在许多应用中使用的氧化铟锡（ITO）通过电子束蒸发技术沉积在苏打石灰玻璃基板上，通过电子束蒸发技术，从90wt％的in_2O_3和10wt％的SnO_2的混合物中沉积。 ITO膜的物理，电气和光学性质被确定为基板温度的函数。在200℃下沉积的膜显示出最佳性质，具有沿[111]方向的优选取向的强衍射峰。实验结果表明，ITO膜的薄层电阻和透射率随衬底温度的增加而增加。由于晶粒生长，表面粗糙度随着底物温度的函数而略微增加。

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