Sol-gel Synthesis of GdAIO_3 Buffer Layers on SrTiO_3 (100) Substrates

机译：SRTIO_3（100）基板上的GDAIO_3缓冲层的溶胶 - 凝胶合成

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To identify the possibility of using GdAlO_3 (GAO) as a buffer layer for YBa_2Cu_3O_(1-δ)^s(YBCO) coated superconductor wire, we report the result of GAO deposition on SrTiO_3 (STO) single crystal substrates by sol-gel processing. Precursor solution was prepared by dissolving stoichiometric quantities of gadolinium hexahydrate and aluminum isoproxide in a mixed binary solvent (2-4 pentanedione:methyl alcohol=1:1). The solutions were spin-coated on STO (100) single crystal substrates and heated at 500°C～1100°C for 2 h in wet Ar-5% H_2 atmosphere. A FESEM observation of the surface morphology of the GAO has shown that it has a very smooth surface with a faceted morphology indicating epitaxy. It was shown in x-ray diffraction characterization that epitaxial GAO films with epitaxial orientation relationship of (001)[112]_(GAO)||(100)[110]_(STO) have been grown on STO (100) substrates.

机译：为了识别使用GDALO_3（GAO）作为YBA_2CU_3O_（1-Δ）^ S（YBCO）涂覆的超导体线的缓冲层的可能性，我们通过溶胶 - 凝胶加工报告高沉积对SRTIO_3（STO）单晶基板上的GAO沉积结果。通过将化学计量的六水合物和铝在混合二元溶剂（2-4戊酰胺：甲醇= 1：1）中溶解化学计量量的六水氧化铝，制备前体溶液。将溶液在STO（100）单晶基质上旋涂，并在湿Ar-5％H_2大气中在500℃〜1100℃下加热2小时。对高保性表面形态的FeSEM观察表明它具有非常光滑的表面，具有指示外延的刻面形态。它在X射线衍射表征中显示，具有（001）[112] _（gaO）|（100）[110] _（STO）的外延取向关系外延Gao膜已在STO（100）基板上生长。

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《IUMRS International Conference in Asia》|2007年||共2页
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Jaecheol Bang; Jin Hyeok Kim; Frederick F. Lange;
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中图分类工程材料一般性问题;
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GdAIO_3 buffer layer; sol-gel processing; YBa_2Cu_3O_(7-δ) (YBCO); superconductor wire;

机译：GDAIO_3缓冲层;溶胶 - 凝胶加工;YBA_2CU_3O_（7-Δ）（YBCO）;超导体线;

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1. The direct growth of SrTiO_3 (100) layers on silicon (100) substrates; application as a buffer layer for the growth of DyBa_2Cu_3O_(7 - #delta#) thin films [J] . L. Mechin, G. J. Gerritsma, J. Garcia Lopez Physica, C. Superconductivity and its applications . 1999,第1期

机译：在硅（100）衬底上直接生长SrTiO_3（100）层;用作DyBa_2Cu_3O_（7-＃delta＃）薄膜生长的缓冲层
2. Sol-gel Synthesis of GdAlO3 Buffer Layers on SrTiO3 (100) Substrates [J] . Jaecheol Bang, Jin Hyeok Kim, Frederick F. Lange Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2007,第1期

机译：SrTiO3（100）基底上GdAlO3缓冲层的溶胶-凝胶合成
3. Epitaxial growth of CoFe_2O_4 on SrTiO_3 (100) and MgO (100) substrates without buffer layer by laser molecular beam epitaxy technique [J] . Z. Yang, C.Ke, L.L Sun, Thin Solid Films . 2011,第7期

机译：通过激光分子束外延技术在无缓冲层的SrTiO_3（100）和MgO（100）衬底上外延生长CoFe_2O_4
4. Sol-gel Synthesis of GdAIO_3 Buffer Layers on SrTiO_3 (100) Substrates [C] . Jaecheol Bang, Jin Hyeok Kim, Frederick F. Lange IUMRS International Conference in Asia . 2007

机译：SRTIO_3（100）基板上的GDAIO_3缓冲层的溶胶 - 凝胶合成
5. Zirconium nitride/aluminum nitride buffer layers for epitaxial growth of (indium,gallium) nitride on silicon substrates. [D] . Oliver, Mark H. 2008

机译：氮化锆/氮化铝缓冲层，用于在硅基板上外延生长（铟，镓）氮化物。
6. The Effect of Buffer Types on the In0.82Ga0.18As Epitaxial Layer Grown on an InP (100) Substrate [O] . Min Zhang, Zuoxing Guo, Liang Zhao, 2018

机译：缓冲剂类型对InP（100）衬底上生长的In0.82Ga0.18As外延层的影响
7. Sol-gel Synthesis of GdAlO3 Buffer Layers on SrTiO3 (100) Substrates [O] . Jaecheol Bang, Jin Hyeok Kim, Frederick F. Lange 2015

机译：在srTiO3（100）衬底上溶胶 - 凝胶合成GdalO3缓冲层
8. Epitaxial Growth of Y(sub 2/sub O/sub 3) Buffer Layers on Biaxially Textured-Ni (100) Substrates by Sol-Gel Process [R] . Beach, D. B. , Chirayil, T. G. , Christen, D. K. , 1999

机译：溶胶 - 凝胶法在双轴织构Ni（100）衬底上外延生长Y（sub 2 / sub O / sub 3）缓冲层

Sol-gel Synthesis of GdAIO_3 Buffer Layers on SrTiO_3 (100) Substrates

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