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Identification Research on CMP Multi-zones Pressure System

机译：CMP多区压力系统的识别研究

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摘要

In the process of very large scale integrated circuit (VLSI) manufacturing, Chemical Mechanical Polishing (CMP) technique is one of the most effective wafer global planarization techniques. The polishing quality depends not only on the slurry and polishing head structure, but also on accurately wafer polishing pressure control. However, the polishing pressure accurately control depends on a generalized pressure control system of the polishing head and multi-zones pneumatic pressure system. As the system has time-varying, nonlinear and coupling characters, it is difficult to apply theoretical modeling method for obtaining the accurate mathematical model. Therefore, this paper presents a method based on subsubmodel identification to establish the precise mathematical model of the pressure control system. The experimental results show that the method is feasible, practical and accurate.
机译：在非常大规模集成电路（VLSI）制造的过程中，化学机械抛光（CMP）技术是最有效的晶片全球平面化技术之一。抛光质量不仅取决于浆料和抛光头结构，还取决于精确的晶片抛光压力控制。然而，抛光压力精确控制取决于抛光头和多区域气动压力系统的广义压力控制系统。由于系统具有时变，非线性和耦合字符，因此难以应用用于获得准确的数学模型的理论建模方法。因此，本文介绍了一种基于子提G模型识别的方法，以确定压力控制系统的精确数学模型。实验结果表明，该方法是可行，实用准确的。

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