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首页> 外文期刊>Microelectronic Engineering >Effect of zone pressure on wafer bending and fluid lubrication behavior during multi-zone CMP process
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Effect of zone pressure on wafer bending and fluid lubrication behavior during multi-zone CMP process

机译：区域压力对多区域CMP工艺中晶片弯曲和流体润滑行为的影响

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摘要

In situ wafer bending and interfacial fluid pressure measurements for a 12-inch multi-zone chemical mechanical polishing (CMP) are reported over a range of zone pressures from 0 to 2.0 psi. Effects of zone pressure configurations on wafer bending and interfacial fluid pressure were studied using a novel in situ measurement system. The individual zone pressure loading tests confirm that the multi-zone wafer carrier has obvious zone-loading effect on wafer bending. The multi-zone loading tests reveal that different zone pressure configurations may result in different wafer bending profiles and fluid pressures during CMP: with the constant mean zone pressure of 1.0 psi, compared with the normal deformed wafer under uniform zone pressures, center-higher zone pressures generate convexly deformed wafer, and the largest fluid pressure, supporting 32% of the downforce; while edge-higher zone pressures trend to produce con-cavely deformed wafer, and the lowest fluid pressure. Particularly, edge zone pressure has obvious effect on wafer edge bending profile, higher edge pressure leads to concave deformation of the wafer edge, as a result, the fluid pressure decreases with an increase in edge zone pressure. It is expected that this study can give assistance to the process control of multi-zone CMP.
机译：据报道，在0至2.0 psi的区域压力范围内，进行了12英寸多区域化学机械抛光（CMP）的原位晶片弯曲和界面流体压力测量。使用新型的原位测量系统研究了区域压力配置对晶片弯曲和界面流体压力的影响。各个区域的压力加载测试证实，多区域晶片承载器对晶片弯曲具有明显的区域加载效果。多区域负载测试表明，在CMP期间，不同的区域压力配置可能会导致不同的晶片弯曲曲线和流体压力：与在均匀区域压力下正常变形的晶片相比，恒定平均区域压力为1.0 psi，中心较高区域压力产生凸形变形的晶片，并产生最大的流体压力，支撑32％的下压力；边缘较高的区域压力趋向于产生凹形变形的晶片和最低的流体压力。特别地，边缘区域压力对晶片边缘弯曲轮廓具有明显的影响，较高的边缘压力导致晶片边缘的凹形变形，结果，流体压力随着边缘区域压力的增加而减小。预期该研究可以为多区域CMP的过程控制提供帮助。

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