...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Materials science forum >Analysis on Contact Forms of Interface in Wafer CMP Based on Lubricating Behavior
【24h】

Analysis on Contact Forms of Interface in Wafer CMP Based on Lubricating Behavior

机译：基于润滑行为的晶圆CMP界面接触形式分析

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Chemical mechanical polishing (CMP) has become the most widely used planarization technology in the semiconductor manufacturing process. In this paper, the distinguish method of lubricating behavior in wafer CMP had been analyzed in theory firstly. Then, the tests of wafer CMP with silicon wafer and deposited copper wafer at different polishing pressure had been done. By the test results, the Stribeck curves obtained showed obvious smooth. But in normal wafer CMP conditions, the friction coefficient of polishing area was above 0.1. By analyzing the experimental results, it was concluded that the lubrication state in CMP interface is belong to the boundary lubrication and the material removal is the process of bringing and removed of the chemical reaction boundary lubricating film on wafer surface constantly. The contact form between the Wafer and the polishing pad is the solid-solid contact. These results will provide theoretical guide to further understand the material removal mechanism of in wafer CMP.
机译：化学机械抛光（CMP）已成为半导体制造过程中使用最广泛的平面化技术。本文首先从理论上分析了晶圆CMP润滑行为的区分方法。然后，进行了在不同抛光压力下用硅晶片和沉积铜晶片进行的晶片CMP的测试。通过测试结果，获得的斯特里贝克曲线显示出明显的平滑。但是在正常的晶片CMP条件下，抛光区域的摩擦系数大于0.1。通过对实验结果的分析，可以得出结论，CMP界面的润滑状态属于边界润滑，而材料去除则是不断地去除和去除晶片表面化学反应边界润滑膜的过程。晶片与抛光垫之间的接触形式是固-固接触。这些结果将为进一步理解晶圆CMP的材料去除机理提供理论指导。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号