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首页> 外文期刊>Tribology International >Wafer bending/orientation characterization and their effects on fluid lubrication during chemical mechanical polishing
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Wafer bending/orientation characterization and their effects on fluid lubrication during chemical mechanical polishing

机译：晶圆弯曲/取向特性及其对化学机械抛光过程中流体润滑的影响

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摘要

A novel in-situ wafer bending/orientation measurement system, cooperated with our previous developed fluid pressure mapping system, was developed for 12-inch chemical mechanical polishing (CMP) equipment. Wafer bending and wafer orientation are studied for copper wafer sliding against the IC1000 pad. The results reveal a micron level wafer bending, and a slight wafer pitch angle of 10~(-5) degree. Both the wafer pitch angle and interfacial fluid pressure increase with the speed till a critical speed and then decrease. The convergent-dominated wedged gap caused by the convexly bended, trailing edge pitched wafer gives a reasonable explanation to the positive-dominated fluid pressure.
机译：一种新颖的原位晶圆弯曲/方向测量系统，与我们先前开发的流体压力测绘系统配合，为12英寸化学机械抛光（CMP）设备开发。研究了晶片弯曲和晶片取向，以使铜晶片在IC1000焊盘上滑动。结果显示出微米级的晶片弯曲，并且微小的晶片俯仰角为10〜（-5）度。晶片俯仰角和界面流体压力都随速度增加直至达到临界速度，然后减小。由凸形弯曲的，后缘倾斜的晶片引起的会聚主导的楔形间隙为正主导的流体压力提供了合理的解释。

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