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Evaluation of dissolved oxygen concentration in silicon wafers by measuring infrared attenuated total reflection

机译:通过测量红外衰减全反射硅晶片中溶解氧浓度的评价

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Dissolved oxygen concentration of silicon wafers were evaluated by measuring infrared absorption of dissolved oxygen in attenuated total reflection (ATR) spectra of silicon wafers and compared with transmission-based evaluation. ATR peak height and the correlation between ATR and transmission was significantly stronger after chemical-mechanical polishing of both sides of wafers to 450 ± 10 μm. The results also indicate that the quantitative evaluation of the oxygen concentration of thin silicon wafers can be done by ATR measurements with appropriate preprocessing.
机译:通过测量硅晶片的衰减的总反射(ATR)光谱的溶解氧的红外吸收并与基于透射的评估进行评估,评价硅晶片的溶解氧浓度。在晶片两侧的化学机械抛光至450±10μm后,ATR峰值高度和ATR和变速器之间的相关性显着更强。结果还表明薄硅晶片的氧浓度的定量评估可以通过适当的预处理进行ATR测量来完成。

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