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Response Frequency Characteristic under Loop Stress for the Material Deposited NiTi SMA Thin Film on PZT Substrate

机译:响应频率特性在PZT底物上沉积Niti SMA薄膜的材料

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The materials deposited NiTi SMA Thin Film on PZT Substrate is prepared by using the magnetron sputtering method and crystallizing at 600°C. The microstructure of the materials is evaluated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and energy dispersed spectroscopy (EDS). The response frequency characteristic under loop stress is studied by damping test. The results show that the NiTi SMA thin film has oriented columnar crystals and the PZT substrate has uniformly equiaxed grains. There isn't obvious component exchange between NiTi SMA thin film and the PZT substrate, especially, there is of the original composition in the region adjacent to the NiTi SMA thin film of the PZT substrate. The deposition of NiTi SMA thin film has no impact to response frequency range under loop stress of the PZT.
机译:通过使用磁控溅射方法并在600℃下结晶,制备沉积在PZT底物上的NITI SMA薄膜的材料。通过扫描电子显微镜(SEM),X射线衍射(XRD)和能量分散光谱(EDS)来评估材料的微观结构。通过阻尼测试研究了环路应力下的响应频率特性。结果表明,NITI SMA薄膜具有取向柱状晶体,PZT基底具有均匀等轴的晶粒。 NITI SMA薄膜和PZT基板之间没有明显的组成交换,特别是,与PZT底物的NITI SMA薄膜相邻的区域中存在原始组合物。 NITI SMA薄膜的沉积对PZT的环应力下的响应频率范围没有影响。

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