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首页> 外文会议>International Conference on Design, Manufacturing and Mechatronics >Abrasive-free Chemical Polishing of Hard Disk Substrate with Benzoyl Peroxide-H2O2 Slurry
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Abrasive-free Chemical Polishing of Hard Disk Substrate with Benzoyl Peroxide-H2O2 Slurry

机译：用苯甲酰基-H2O2浆料与苯甲酰基质的无硬盘基材的无磨料化学抛光

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摘要

The effect of benzoyl peroxide (BPO) as an initiator in H2O2 slurry for abrasive-free chemical polishing of hard disk substrate was investigated. The results of abrasive-free polishing tests show that the introduction of BPO increases material removal rate (MRR) and decreases the value of Roughness (Ra). To further investigate the mechanism of abrasive-free polishing, electron spin-resonance spectroscopy (EPR) tests, auger electron spectrometer (AES) and electrochemical tests were conducted. Electron spin-resonance spectroscopy (EPR) tests show the concentration of radicals increase and promote the reaction on the surface of hard disk substrate. Auger electron spectrometer (AES) and electrochemical tests indicate chemical changes happen on the surface of hard disk substrate, and the formed oxide film may be sparse or porous. The results imply that the introduction of BPO can effectively improve the effect of abrasive-free polishing.
机译：研究了苯甲酰过氧化物（BPO）作为H2O2浆料中的引发剂的施加的硬盘基板的无磨料的引发剂。磨蚀性抛光测试的结果表明，BPO的引入增加了材料去除率（MRR）并降低粗糙度（RA）的值。为了进一步研究无磨料抛光的机制，对电子自旋共振光谱（EPR）测试，螺旋钻电子光谱仪（AES）和电化学测试进行了。电子自旋共振光谱（EPR）试验显示自由基的浓度增加，促进硬盘基板表面的反应。螺旋钻电子光谱仪（AES）和电化学测试表明硬盘基板表面上发生化学变化，并且形成的氧化膜可以是稀疏或多孔的。结果意味着BPO的引入可以有效地提高磨蚀性抛光的影响。

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