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Recovery of Gallium and Arsenic from Gallium Arsenide Semiconductor Scraps

机译：从砷化镓半导体废料中恢复镓和砷

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摘要

In this paper, a novel technique for recovery of gallium and arsenic by thermal decomposition under vacuum is presented. The effects of distillation temperature on the volatilization behavior of each component were investigated. Theoretical calculations and experimental studies have shown that the method is feasible. The results show that under optimum conditions, highly pure Ga can be extracted with advantages over conventional techniques, including simple operation and environmental friendliness. For example, metallic gallium (purity > 99.99%) is obtained at 1273 K after 3 h under 3-8 Pa. Arsenic is obtained in the form of a elementary substance which could be preserved with relative ease.
机译：本文介绍了真空热分解回收镓和砷的新技术。研究了蒸馏温度对每种组分挥发行为的影响。理论计算和实验研究表明该方法是可行的。结果表明，在最佳条件下，高纯的GA可以通过优于传统技术，包括简单的操作和环境友好。例如，在3小时3小时后在1273k下获得金属镓（纯度> 99.99％），在3-8Pa的3℃下获得。砷以基本物质的形式获得，其可以相对容易地保存。

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