• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Energy Technologies Symposium >Crystal Growth Mechanism of Si in Hypereutectic Al-Si Melt During the Electromagnetic Directional Solidification
【24h】

Crystal Growth Mechanism of Si in Hypereutectic Al-Si Melt During the Electromagnetic Directional Solidification

机译：电磁定向凝固期间SI晶体生长机制溶液熔体

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

An efficient enrichment of primary silicon from the Al-Si melt can be beneficial for the Si purification and the cost reduction of the solvent refining process. In this paper, an alternating magnetic field was used to enhance the mass transfer and promote the crystal growth of primary silicon during the directional solidification of hypereutectic Al-Si alloy. The results show that the growth rate and morphologies of Si crystals changed continuously along the directional solidification direction. With the decreasing of Si content in the melt and the weakness of the electromagnetic stirring, the crystal growth rate of primary silicon gradually decreased and the Si morphologies changed from plane to cellular, cellular dendrite, and columnar dendrite, respectively. This provides a deeper understanding of the Si crystal growth during the electromagnetic solidification, which will be good for achieving a high-efficiency enrichment of primary silicon in Al-Si melt.
机译：从Al-Si熔体的初级硅的有效富集初级硅可以有利于Si纯化和溶剂精制过程的成本降低。在本文中，使用交替磁场来增强质量转移并促进过度凝固Al-Si合金的定向凝固过程中初级硅的晶体生长。结果表明，Si晶体的生长速率和形态沿方向凝固方向连续变化。随着熔体中的Si含量的降低和电磁搅拌的弱度，初级硅的晶体生长速率逐渐降低，Si形态分别从平面变为细胞，细胞枝晶和柱状树枝状。这提供了对电磁凝固过程中Si晶体生长的更深入了解，这将是在Al-Si熔体中实现初级硅的高效富集。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号