Performance analysis of 20 nm gate length Fin-FET for different materials and fin-widths

机译：不同材料和翅片宽度20nm栅极长度翅片FET的性能分析

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Scaling is the most important demand of current scenario as the device technology changes day by day. The channel length of field effect transistors has reduced from micrometers to tens of nanometers. However, lot of limitation and defects are increases with scaling down the device dimensions such as short channel effect, reliability and variability effects issues. To overcome this type of problems related to scaling, new transistor configuration have to be investigated. FinFET is the promising doublegate or tri-gate transistor configuration to extend scaling over planar device. Multiple gates device have better control over the short channel effect. A double gate Fin field effect transistor can reduce Drain Induced Barrier Lowering (D1BL) and improve threshold voltage (short channel effects). In this paper, an important work function geometrical parameter is discussed using Visual TCAD. The transfer characteristics of the FinFET at different fin widths have been acquired at a supply voltage of 0.1V. T he comparison is made at different Fin-widths. It is observe that, at larger Fin-widths the drain current is increases in comparison to shorter fin widths.

机译：缩放是当前场景的最重要需求，因为设备技术日复一日地发生变化。场效应晶体管的通道长度从微米到数十纳米减少。然而，大量的限制和缺陷随着诸如短信效应，可靠性和可变性效应问题的设备尺寸而增加，缩放缩小。为了克服与缩放相关的这种类型的问题，必须研究新的晶体管配置。 FINFET是有前途的双通或三栅极晶体管配置，以延长平面装置的缩放。多个栅极设备更好地控制短信效果。双栅极翅片场效应晶体管可以减少漏极感应屏障降低（D1BL）并提高阈值电压（短沟道效应）。在本文中，使用Visual TCAD讨论了一个重要的工作函数几何参数。已经以0.1V的电源电压获取不同翅片宽度以不同翅片宽度的FinFET的传递特性。比较在不同的翅片宽度上进行比较。观察到，在较大的翅片宽度下，与鳍片宽度相比，漏极电流增加。

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《International Conference on Communication and Computing Systems》|2017年|xvii 1111 p. :|共5页
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Upendra Kumar Gupta; Vishal Ramola; Poornima Mittal; Brijesh Kumar;
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中图分类 TN91-532;
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comparison; shorter; widths;

机译：比较;较短;宽度;

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2. 3-D Simulation of Novel High Performance of Nano-Scale Dual Gate Fin-FET Inserting the High-K Dielectric TiO2 at 5 Nm Technology [J] . Bourahla N., Hadri B., Bourahla A. Silicon . 2020,第6期

机译：3-D模拟新型高性能的纳米双栅极鳍FET在5 nm技术中插入高k电介质TiO2
3. Simulation Study of Performance for a 20-nm Gate Length In$_{bf 0.53}$ Ga$_{bf 0.47}$As Implant Free Quantum Well MOSFET [J] . Benbakhti B., Martinez A., Kalna K., Nanotechnology, IEEE Transactions on . 2012,第4期

机译：20 nm栅极长度In $ _ {bf 0.53} $ Ga $ _ {bf 0.47} $ As无植入量子阱MOSFET的性能的仿真研究
4. Performance analysis of 20 nm gate length Fin-FET for different materials and fin-widths [C] . Upendra Kumar Gupta, Vishal Ramola, Poornima Mittal, International Conference on Communication and Computing Systems . 2017

机译：不同材料和翅片宽度20nm栅极长度翅片FET的性能分析
5. Detecting DNA using silicon nanopores and 20--40 nm gate-length RFNMOSFET. [D] . Heng, Jiunn Benjamin. 2005

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6. Rapid formation and real-time observation of micron-sized conjugated nanofibers with tunable lengths and widths in 20 minutes by living crystallization-driven self-assembly [O] . Sanghee Yang, Tae-Lim Choi 2020

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7. Figure 8: (A) Tree resulted standard MP analysis of 159,074 bp alignment of complete plastomes of palms (Arecales), Dasypogonales, and Typha latifolia (Poales, Typhaceae) from Barrett et al. (2016) (see their Fig. 4 and Fig. S5), a posteriori rooted relatively the cattail (Typha) (length = 66,788, CI = 0.7363, RI = 0.6109), 119,251 characters are constant, and the number of the parsimonyinformative characters is equal to 19,124; (B) the average consensus tree of the score 0.00755 resulted the analysis of the Hennigian forest of the 25,630 trees derived from the modified binary representation of the original 159,074 bp alignment of complete plastomes of palms (Arecales), Dasypogonales, and Typha latifolia (Poales, Typhaceae) from Barrett et al. (2016) (see “Materials and Methods” for the details). The cattail is assumed to be the best all-plesiomorphic group. “Additional…” FORESTER’s output tree file (see “Materials and Methods” for the details) selected for future analysis; (C) the average consensus tree of the score 0.00760 resulted the analysis of the Hennigian forest of the 25,576 trees, derived from the binary representation of the original 15,9074 bp alignment of the complete plastomes of palms (Arecales), Dasypogonales, and Typha latifolia (Poales, Typhaceae) from Barrett et al. (2016) (see “Materials and Methods” for the details), but with all of the 54 trees, which contain the clade (Cocos nucifera plus Elaeis guineensis) have been removed from the input forest before analysis. [O] . -1

机译：图8：（a）树导致标准MP分析为棕榈（槟榔树），daspophonales和Typha Latifolia（Poales，Typhaceae）的完全塑料的159,074bp对齐。来自Barrett等人。（2016）（见其图4和图4. S5），后验生根相对队伍（TYPHA）（长度= 66,788，CI = 0.7363，RI = 0.6109），119,251个字符是常数的，并且是阳离子信息特征的数量等于19,124; （b）分数的平均共识树0.00755导致25,630棵树的Hennigian森林分析来自原始的棕榈（槟榔树），daspogonal和Typha Latifolia（Poales的Typha Latifolia（Poales来自Barrett等人的Typhaceae）。（2016）（参见“材料和方法”详情）。标志着香烟是最好的全普拉西氏族。 “附加...”Forester的输出树文件（参见“用于未来分析的详细信息”的“材料和方法”; （c）评分的平均共识树0.00760导致25,576棵树的Hennigian森林的分析来自原始的Palms（槟榔的完全塑料，Daspogonal和Typha的原始塑料的二进制表示Latifolia（Poales，Typhaceae）来自Barrett等人。（2016）（参见“材料和方法”的细节），但在分析之前已经从输入森林中除去了所有54棵树（Cocos Nucifera Plus Guineensis）的所有54棵树。
8. Environmental Testing and Evaluation of Stabilized Wastes, Performance ofStabilized Materials, and New Aggregate Tests [R] . 1995

机译：稳定废物的环境试验和评价，稳定材料的性能和新的骨料试验

Performance analysis of 20 nm gate length Fin-FET for different materials and fin-widths

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