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TEM Investigation of the Surface Layer Structure 111b2 of the Single NiTi Crystal Modified by the Si-Ion Beam Implantation

机译:通过Si离子束植入改性的单一NITI晶体的表面层结构的TEM研究111 B2

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The study was carried on for the single NiTi crystals subjected to the Si-ion beam implantation. Using the transmission electron microscopy technique (TEM), the surface layer structure [111]_B2 was examined for the treated material. The modified near-surface sublayers were found to have different composition. Thus the uppermost sublayer contained mostly oxides; the lower-lying modified sublayer material was in an amorphous state and the thin underlying sublayer had a defect structure.
机译:对进行Si离子束植入的单个NITI晶体进行该研究。使用透射电子显微镜技术(TEM),检查表面层结构[111] _B2用于处理过的材料。发现改性的近表面子层具有不同的组成。因此,最上层的子层含有大多数氧化物;低洼改性的子层材料在非晶态处,薄的底板子层具有缺陷结构。

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