GeSi infrared detectors

机译：GE SI infrared detectors

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Germanium-silicon heterojunctions can be used to fabricate detectors suitable for use in far-infrared focal plane arrays. We report here the growth and characterization of multiple quantum well and heterojunction internal photoemission (HIP) structures which have thresholds uitable for the 8-12 mum region. We have used absorption measurements to show that free-carrier absorption is dominant in both structures for normally incident illumination. The HIP structure is more attractive from the point of view of integability with silicon readout circuitry. We will report the results of optical and electrical characterization of HIP detectors which show that this detector can achieve background-limited infrared performance at an operating temperature of 40 K.

机译：锗 - 硅杂交功能可用于制造适用于远红外焦平面阵列的探测器。我们在此报告多量子阱和异质结的生长和表征，其具有8-12扇米区域的阈值的阈值。我们使用了吸收测量来表明，自由载体吸收在两种结构中占主导地位，用于通常入射的照明。从硅读出电路的可全部性的角度来看，髋关节结构更具吸引力。我们将报告髋关节探测器的光学和电气表征的结果，表明该检测器可以在40k的工作温度下实现背景限制的红外性能。

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《Symposium on group heterostructures, physics and devices of the E-MRS conference》|1997年||共4页
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作者
R.Strong; D.W.Greve; R.Misra; M.Weeks; P.Pellegrini; European Materials Research Society;
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中图分类半导体技术;
关键词
germanium; silicon infrared spectroscopy; quantum wells;

机译：锗;硅红外光谱;量子孔;

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3. Complementary barrier infrared detector (CBIRD) with double tunnel junction contact and quantum dot barrier infrared detector (QD-BIRD) [J] . Ting D.Z.-Y., Soibel A., Khoshakhlagh A., Infrared physics and technology . 2013,第Null期

机译：具有双隧道结接触的互补势垒红外探测器（CBIRD）和量子点势垒红外探测器（QD-BIRD）
4. Infrared photoluminescence from GeSi nanocrystals embedded in a germanium-silicate matrix [J] . Volodin V. A., Gambaryan M. P., Cherkov A. G., Journal of Experimental and Theoretical Physics . 2015,第6期

机译：嵌入锗硅酸盐基质中的GeSi纳米晶体的红外光致发光
5. INFRARED PHOTOLUMINESCENCE FROM GeSi NANOCRYSTALS EMBEDDED IN A GERMANIUM-SILICATE MATRIX [J] . V. A. Volodin, M. P. Gambaryan, A. G. Cherkov, Журнал экспериментальной и теоретической физики: Продолж. физ. части журнала Русского физико-хим. об-ва, издававшегося с 1873 по 1930 г. . 2015,第6期

机译：硅酸锗基质中嵌入的GeSi纳米晶体的红外光致发光
6. GeSi infrared detectors [C] . R.Strong, D.W.Greve, R.Misra, Symposium on group heterostructures, physics and devices of the E-MRS conference . 1997

机译：GE SI infrared detectors
7. Development of microcantilever mid-infrared detectors and sources and their application in infrared spectroscopy. [D] . Kwon, Beomjin. 2013

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8. Comparison of an InSb Detector and Upconversion Detector for Infrared Polarization Spectroscopy [O] . Rasmus L. Pedersen, Dina Hot, Zongshan Li -1

机译：InSb检测器和上转换检测器的红外偏振光谱比较
9. Reducing Test Cost of Infrared Detectors: A Machine Learning Approach to Failure Prediction of Infrared Detectors [O] . QING-RONG ZOU, JIAN SHI, QING-AN XU, 2018

机译：降低红外探测器的测试成本：红外探测器故障预测的机器学习方法

GeSi infrared detectors

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