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NUCLEATION AND GROWTH OF HETERO-EPITAXIAL YBa_2Cu_3O_x AT THE BURIED PRECURSOR/SUBSTRATE INTERFACE

机译:掩埋前体/衬底界面处的异质外延YBA_2CU_3O_x的成核和生长

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The so-called BaF2 process, which is a postdeposition reaction process for thick YBa2Cu3O7, YBCO, films, is extensively studied for the development of YBCO conductors for electric-system applications. It is shown here that the nucleation and the growth process of hetero-epitaxial YBCO on single crystalline and textured substrates is very unique compared with other ex situ growth processes such as sol gel processes for the fabrication of epitaxial oxide films. Since the latter process is limited to the growth of very thin films (~ 100 nm) and requires very high temperatures (> 1000 °C), it is suggested that the same principle for the BaF2 process for YBCO films be used to grow thick films of other functional oxides.
机译:所谓的BAF2工艺,其是厚YBA2Cu3O7,YBCO,薄膜的后沉积反应过程,广泛研究了用于电气系统应用的YBCO导体的开发。 这里示出了与其他Ex原位生长方法(例如用于制备外延氧化膜的溶胶凝胶工艺)相比,杂交外延ybco的成核和生长过程非常独特。 由于后一种过程仅限于非常薄膜(〜100nm)的生长并且需要非常高的温度(> 1000°C),因此建议使用与YBCO薄膜的BAF2方法相同的原理来生长薄膜 其他功能氧化物。

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