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首页> 外文会议>Epitaxial Growth of Functional Oxides Symposium >DEPOSITION of (211_(~1.0nm)/123_(~10nm))xN MULTILAYER COATED CONDUCTORS on Ni-BASED TEXTURED SUBSTRATES
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DEPOSITION of (211_(~1.0nm)/123_(~10nm))xN MULTILAYER COATED CONDUCTORS on Ni-BASED TEXTURED SUBSTRATES

机译：沉积（211-（〜1.0nm）/ 123_（〜10nm））XN多层涂层导体在Ni的纹理基板上

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Properties of multilayer (211-.i.Onm/123-ionm)xN composite films deposited on buffer-coated rolling assisted biaxially textured (RABiT's?) Ni-alloy substrates were investigated providing initial results. Two different RABiT's substrates were tested: CeO2/YSZ/CeO2/Ni deposited in-situ prior to the YBCO composite deposition, and CeOj/YSZAY^Oa/Ni-3%W substrates prepared in an external process. Similar transport critical current densities (Jcs) at 77K in a self-field of - 0.6-1.0 MA/cm2 and transition temperatures (Tcs) ~ 89-90 K were obtained for films deposited onto both architectures. These results were consistently achieved for the initial deposition parameters chosen on both substrates; no process optimization was conducted in this report. Compared to 123 films deposited on similar substrates, transport Jcs (77K, Hnppi) were reduced slightly for HBppi ~ < 1.5 T, but increased on average for Happi > 1.5 T. However, this is contrary to results on single crystals which had improved current densities even at Happj ~ < 1.5 T; i.e. where some optimization has occurred. The surface microstrucrure of the multilayer films on RABiT's substrates showed flat surfaces and greatly reduced participate formation, similar to multilayer deposition on single crystal substrates. However void formations were observed similar to deposition of 123 on RABiT's, which presumably predominately resulted from defects in the buffer layer structure.
机译：研究了沉积在缓冲涂覆的轧制辅助双轴纹理（兔子的α）Ni-合金底物上的多层（211-u.onm / 123-IONM）XN复合膜进行了初始结果。测试了两种不同的兔子基材：在YBCO复合材料沉积之前，CeO2 / YSZ / CeO2 / Ni沉积原位，CeOJ / Yszay ^ OA / Ni-3％W在外部过程中制备。在沉积在两个架构上的薄膜中获得77K在77K处的类似传输临界电流密度（JCS）在0.6-1.0mA / cm2和过渡温度（TCS）〜89-90k中。对于在两个基板上选择的初始沉积参数，始终如一地实现了这些结果;本报告中未进行流程优化。与沉积在类似底物上的123膜相比，HBPPI〜<1.5 T的运输JCS（77K，HNPPI）略微减少，但平均为HAPPI> 1.5 T.然而，这与具有改善电流的单晶的结果相反甚至在HappJ〜<1.5 T处的密度;即，发生了一些优化的地方。兔子基板上的多层膜的表面微观特劳限度显示平坦的表面，并大大降低了参与形成，类似于单晶基板上的多层沉积。然而，观察到空隙形成与兔上的123的沉积相似，这可能主要是从缓冲层结构中的缺陷导致的。

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