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首页> 外文会议>Electronics System-Integration Technology Conference;ESTC 2012;Electronics System Integration Technology Conference >Integration of the ZoneBOND~(?) temporary bonding material in backside processing for 3D applications
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Integration of the ZoneBOND~(?) temporary bonding material in backside processing for 3D applications

机译：居币〜（？）临时粘接材料的临时粘接材料在后侧应用中的3D应用中

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Among the many 3D technology options that are being explored today, the 3D-stacked IC approach has become a mature and economically viable technology and provides the highest density for 3D interconnects to date. A key step in this process is the bonding of the device wafer to a carrier wafer prior to wafer thinning, by using a temporary adhesive layer. While great progress has been made over the past 2 years with respect to the wafer-support system, some of these materials including thermoplastics, laser-degradable or chemically dissolvable materials can present some integration limitations, especially if low-melting-point solders or high-topography structures are present on the backside of the wafers. The approach pursued by imec was for the first time demonstrated on full CMOS wafers using the BSI HT-10.10 thermoplastic material in a 300mm production line, and this work furthers the previous development by successfully demonstrating the integration of the room temperature peelable ZoneBOND temporary bonding material from Brewer Science as a one-to-one alternative to the BSI HT-10.10 material.
机译：在今天正在探索的许多3D技术选项中，3D堆叠的IC方法已成为成熟和经济上可行的技术，并为迄今为止提供3D互连的最高密度。该过程中的一个关键步骤是通过使用临时粘合剂层在晶片稀疏之前将器件晶片粘接到载体晶片。虽然在过去的2年方面取得了巨大进展，但在晶圆支持系统方面取得了巨大进展，其中一些材料包括热塑性塑料，激光可降解或化学溶解材料，可以呈现一些集成限制，特别是如果低熔点焊料或高 - 在晶片的背面存在分析结构。 IMEC追求的方法是使用300mm生产线中的BSI HT-10.10热塑性材料在全CMOS晶片上展示的第一次，并通过成功地证明室内温度可剥离塞型临时粘合材料的整合来实现以前的开发从酿酒商科学作为BSI HT-10.10材料的一对一替代品。

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